Electromechanical properties of A-site (LiCe)-modified sodium bismuth titanate (Na0.5Bi4.5Ti4O15) piezoelectric ceramics at elevated temperature

Abstract

The Aurivillius-type bismuth layer-structured (NaBi)0.46(LiCe)0.04Bi4Ti4O15 (NBT-LiCe) piezoelectric ceramics were synthesized using conventional solid-state processing. Phase analysis was performed by x-ray diffraction and microstructural morphology was assessed by scanning electron microscopy. The dielectric, piezoelectric, ferroelectric, and electromechanical properties of NBT-LiCe ceramics were investigated. The piezoelectric activities were found to be significantly enhanced compared to NBT ceramics, which can be attributed to the lattice distortion and the presence of bismuth vacancies. The dielectric and electromechanical properties of NBT-LiCe ceramics at elevated temperature were investigated in detail. The excellent piezoelectric, dielectric, and electromechanical properties, coupled with high Curie temperature (Tc=660 °C), demonstrated that the NBT-LiCe ceramics are the promising candidates for high temperature applications.

Crystal structure, dielectric and piezoelectric properties of Ta/W codoped Bi3TiNbO9 Aurivillius phase ceramics

“…Meanwhile, the amplitude of Z a decreases, on the contrary, the value of Z r increases at elevated temperatures. This tendency has also been reported in other Aurivillius phase piezoelectric ceramics [36,37]. The electromechanical coupling factor k p value as a function of temperatures for BTTNW-2 ceramics is represented in Fig.…”

Dielectric, ferroelectric and piezoelectric properties of Ca0.1Sr0.9Bi2Nb2O9 ceramic

“…The excellent piezoelectric constant polarized at 150°C for 20 min of all samples is founded to be 18 pC/N when x is 0.1, which is higher than the reported results in other Aurivillius material systems [17,33]. The enhanced d 33 originates from the combined effects caused by the lattice distortion and the increasing concentrations of oxygen vacancies [6,24]. It is also clear to observe that the d 33 first increases from 16 to 18 pC/N as the Ca content changes from 0.0 to 0.1 because of the lattice distortion caused by the different ionic radius between Ca 2?…”

Room temperature electromechanical and magnetic investigations of ferroelectric Aurivillius phase Bi5Ti3(FexMn1−x)O15 (x = 1 and 0.7) chemical solution deposited thin films

“…1 Bismuth layer-structured ferroelectric materials in the Aurivillius phase 2 have received increasing interest as lead free piezoelectric materials with high ferroelectric Curie temperatures (T c generally over 500 C). 3,4 Because of their fatigue-free nature, Aurivillius phase materials have also been given significant attention for their potential use in ferroelectric random-access memory (FeRAM), 5,6 which combines the speed of dynamic access memory (DRAM) with the non-volatility and lower power requirements of hard disk and flash memory. [5][6][7][8][9] These materials are naturally 2D nanostructured in nature, consisting of (Bi 2 O 2 ) 2þ layers alternating with nABO 3 perovskite units, in blocks $1-2 nm thick, described by the general formula Bi 2 O 2 (A nÀ1 B n O 3nþ1 ).…”