Electroluminescent ZnS–Cu films made by metal–organic chemical vapour deposition and thermodiffusion

Abstract

ZnS, ZnS-Cu films were deposited using an original chemical method under atmospheric pressure on to glass substrates to form thin-film electroluminescent (TFEL) devices. The ZnS, ZnS-Cu films were doped with Cu, Cl by a thermodiffusion (thermal diffusion) method from a ZnS powder doped with Cu and Cl. The TFEL devices had a conventional double insulating structure. The investigated TFEL devices had performance parameters including blue colour emission (λ max = 455 nm) and a brightness of 10 cd m −2 under sine wave excitation at a voltage of 60 V and a frequency of 5 kHz. The composition of the spectra was studied and from these results it was shown that the relative intensity of the bands and the maximum location are determined from the growth conditions. There are two main types of electroluminescent (EL) spectra, which differ in the number and location of green emission bands. A set of conditions was found for the fabrication of stable ZnS-Cu, Cl devices. The degradation behaviour of the ZnS-Cu, Cl device fabricated using the new method is the same as that of a commercial thin-film phosphor. The possibility of obtaining a stable ZnS-Cu emitter is shown. The EL mechanism and degradation characteristics are discussed.

The effect of small addition of copper on the growth process, structure, surface charge and adsorption properties of ZnO films in the pyrolysis of dithiocarbamates

“…Features of dithiocarbamates pyrolysis in air at atmospheric pressure Despite a long history, methods for the synthesis of materials based on ZnO and its composites continue to attract considerable attention from completely different fields of science, such as the new synthetic approaches of Green Chemistry 47,48 or modern catalytic enhanced or atmospheric-pressure mist -Chemical Vapor Deposition (CVD) based methods. 49,50 Considering the features of using ZnO:Cu-based materials as functional surfaces (catalysts, sensitive layers, electrodes, etc. ), there is still a real need for a technology that would allow the achievement of high film growth rates at low synthesis temperatures on large area arbitrary profile substrates when using simple equipment and comparatively low production costs.…”

“…One of the most effective industrial methods for producing large area thin homogeneous ZnO films is the chemical vapor deposition method. 1,2,[49][50][51] Regardless of the specific design of the CVD reactor, a key element in the film growth process is the choice of a precursor capable of rapidly and completely decomposing at a given temperature on the surface of the substrate.…”

“…The complexing agent M can be Zn, Cd, In, Cu, Ag, Pb, Bi metals, as well as a number of other elements from which the films of the corresponding sulfides and oxides can be obtained, 47 and have been obtained. [48][49][50][51] The features of DTC complexes are associated, in particular, with the fact that the central metal ion M can form its coordination sphere consisting of four sulfur atoms in various ways. Ligands can bind to the central metal ion with either monodentate asymmetrical or bidentate symmetrical bonding.…”

Influence of copper content and pre-treatment on the structure of ZnS:Cu thin films by sulfidation

“…Within the transparent conducting material regime, the hole conduction which makes the conductivity temperature independent is due to substitutional incorporation of Cu onto Zn sites [9]. Various synthesis methods of ZnS:Cu thin films, such as chemical vapor deposition (CVD) [10], the sol-gel method [11], RF magnetron sputtering [6] and metal-organic chemical vapor deposition [12] have been explored. In this paper, we found controllable growth for good quality ZnS:Cu thin films by low-temperature sulfidation.…”