Electroluminescence in SiOx films and SiOx-film-based systems

Sopinskyy, M. V.; Khomchenko, V. S.

doi:10.1016/s1359-0286(03)00048-2

Cited by 47 publications

(27 citation statements)

References 69 publications

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“…11 Emission between 435 nm and 500 nm is associated with Neutral Oxygen Vacancy (NOV) defects, whereas the emission of around 520 nm is related to silicon dangling bond (Si-db) defects. 23 In Ref. 11, an LEC using SRO as an active material shows emission at 700 nm under 40 V of electric polarization, but it shifts to 670 nm as the voltage is increased to 50 V, agreeing with emission presented in the ML structures.…”

Section: à2supporting

confidence: 56%

“…11, an LEC using SRO as an active material shows emission at 700 nm under 40 V of electric polarization, but it shifts to 670 nm as the voltage is increased to 50 V, agreeing with emission presented in the ML structures. Regarding red emission, it was reported that the emission of around 670 nm is produced by Non-Bridging Oxygen Hole Centers (NBOHC's), 12,23 and emission from 805 to 820 nm is due to Si-nc into the SiO 2 . 24 In consequence, it is concluded that the EL emission in our ML is due to a combination of defects and Si-nc, as should be expected because of the mixed material; however, the emission is mainly due to defects, especially NOV and NBOHCS.…”

Section: à2mentioning

confidence: 99%

“…These values agree with the efficiency values reported in other works that use light emitters with offstoichiometric silicon oxide as an active material. 23,25 IV. CONCLUSION Nanometric multilayer structures that alternate emitting and conductive layers of SRO were fabricated by LPCVD.…”

Section: à2mentioning

confidence: 99%

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Electrical and electroluminescent characterization of nanometric multilayers of SiOX/SiOY obtained by LPCVD including non-normal emission

Alarcón-Salazar

Zaldívar-Huerta

Aceves-Mijares

2016

Journal of Applied Physics

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This work describes the analysis and fabrication by Low Pressure Chemical Vapor Deposition of two light-emitting capacitors (LECs) constituted by nanometric multilayers of silicon-rich oxide. For both structures, seven layers were used: three light emitting layers with 6% silicon excess and four conductive layers with 12% silicon excess for one LEC and the other with 14% silicon excess. Both LECs were annealed at 1100 °C. Both multilayers demonstrate a substantially improved photoluminescent response compared to single emitting layers. A dielectric constant of 4.1 and a trap density of 1016 cm−3 were obtained from capacitance-voltage curves. Analysis of current-voltage and electroluminescence-voltage (EL-V) characteristics indicates that EL initiates under the space-charge-limited current mechanism, and the required voltage to turn on the emission is 38 V which is the trap-free limit voltage. However, EL increases exponentially under the impact ionization and trap-assisted tunneling conduction mechanisms. The electroluminescence spectra for both multilayers show two emission peaks centered in 450 and 700 nm attributed to oxygen defects. Also, the LEC non-normal emission was measured and it behaves like a Lambertian optical source. Both multilayers obtain the values of efficiency in the order of 10−6 which is in good agreement with the values reported in the literature.

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Section: à2supporting

confidence: 56%

Section: à2mentioning

confidence: 99%

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Electrical and electroluminescent characterization of nanometric multilayers of SiOX/SiOY obtained by LPCVD including non-normal emission

Alarcón-Salazar

Zaldívar-Huerta

Aceves-Mijares

2016

Journal of Applied Physics

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“…Sopinskyy and Khomchenko 98) recently gave a nice review for EL in SiO x films and SiO x filmbased systems.…”

Section: Defect Structures Of Asio 2 Models Of the E Centersmentioning

confidence: 99%

Structure and Properties of Amorphous Silica and Its Related Materials: Recent Developments and Future Directions

Uchino

2005

J. Ceram. Soc. Japan

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Amorphous silica and related silicabased materials have been widely developed in optoelectronics and optical telecommunications technology. Despite comprehensive research for over the decades, the subject of amorphous silica continues to excite the interest of researchers in the field of chemistry, physics, and geology. This paper reviews some of the recent experimental and theoretical developments in the field, including mediumrange ord er, structural changes under pressures, vibrational and thermodynamic anomalies, and photoluminescence properties.

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“…Beginning with the observation by Canham in 1990 of bright emission from porous silicon, 1 numerous groups have studied the optical properties of nanometre-scale silicon wires, clusters, and crystals. 2 Despite reports of electroluminescence [3][4][5][6] and even some evidence of optical gain from nanocrystals, 7 the field remains controversial, with a number of open questions still persisting about the source of optical emission. Competing explanations include radiative recombination of confined excitons, 8,9 luminescent surface states, [10][11][12] combined emission from nanoclusters and nanocrystals, 13 and defect emission.…”

Section: Introductionmentioning

confidence: 99%

Probing energy transfer in an ensemble of silicon nanocrystals

Jayatilleka

Diamare

Wojdak

et al. 2011

Journal of Applied Physics

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Time-resolved photoluminescence measurements of silicon nanocrystals formed by ion implantation of silicon into silicon dioxide reveal multi-exponential luminescence decays. Three discrete time components are apparent in the rise and decay data, which we associate with different classes of nanocrystals. The values of decay time are remarkably constant with emission energy, but the relative contributions of the three components vary strongly across the luminescence band. In keeping with the quantum confinement model for luminescence, we assign emission at high energies to small nanocrystals and that at low energies to large nanocrystals. By deconvolving the decay data over the full emission band, it is possible to study the migration of excitation from smaller (luminescence donor) to larger (luminescence acceptor) nanocrystals. We propose a model of diffusion of excitation between neighboring nanocrystals, with long lifetime emission being from the largest nanocrystal in the local neighborhood. Our data also allow us to study the saturation of acceptor nanocrystals, effectively switching off excitation transfer, and Auger recombination in non-interacting nanocrystals.

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Electroluminescence in SiOx films and SiOx-film-based systems

Cited by 47 publications

References 69 publications

Electrical and electroluminescent characterization of nanometric multilayers of SiOX/SiOY obtained by LPCVD including non-normal emission

Electrical and electroluminescent characterization of nanometric multilayers of SiOX/SiOY obtained by LPCVD including non-normal emission

Structure and Properties of Amorphous Silica and Its Related Materials: Recent Developments and Future Directions

Probing energy transfer in an ensemble of silicon nanocrystals

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