1994
DOI: 10.1063/1.112169
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Electrochemical Er doping of porous silicon and its room-temperature luminescence at ∼1.54 μm

Abstract: We present a new electro-chemical method for incorporating high concentration Er ions deep into porous silicon layers and its intense photoluminescence at ∼1.54 μm at room temperature. Porous silicon layers prepared by anodic etching of p-type silicon substrates in HF/H2O are immersed in ErCl3/ethanol solution. Then the negative bias relative to a counter platinum electrode is applied to the samples. Er3+ ions are drawn into fine pores of the porous silicon layers by the electric field. After thermal annealing… Show more

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Cited by 161 publications
(74 citation statements)
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“…The excitation spectrum corresponding to the stain etched and Eu-doped PSLs was normalized to the 7 F 0 5 L 6 transition (395 nm), and measured at em = 615 nm, where it presents the maximum photoluminescent intensity, and the excitation spectrum corresponding to the Eu-doped non-textured sample was normalized to the 7 To evaluate which sample can offer a higher contribution to the enhancement of a solar cell efficiency, the increase of the e-h pairs produced by the down-shifting process in a crystalline silicon solar cell has been approximated considering only the emission at the maximum photoluminescent intensities at 615 nm for stain etched Eu-doped PSLs and 611 nm for the Eu-doped non-textured layer.…”
Section: Resultsmentioning
confidence: 99%
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“…The excitation spectrum corresponding to the stain etched and Eu-doped PSLs was normalized to the 7 F 0 5 L 6 transition (395 nm), and measured at em = 615 nm, where it presents the maximum photoluminescent intensity, and the excitation spectrum corresponding to the Eu-doped non-textured sample was normalized to the 7 To evaluate which sample can offer a higher contribution to the enhancement of a solar cell efficiency, the increase of the e-h pairs produced by the down-shifting process in a crystalline silicon solar cell has been approximated considering only the emission at the maximum photoluminescent intensities at 615 nm for stain etched Eu-doped PSLs and 611 nm for the Eu-doped non-textured layer.…”
Section: Resultsmentioning
confidence: 99%
“…The incorporation of the rare earth ions in silicon can be carried out by ion implantation [6], electrochemical migration [7] or spark processing [8] and even sol-gel processes [9]. However the high cost of these techniques or the required time of the processes is not adequate for the solar cells fabrication process.…”
Section: Introductionmentioning
confidence: 99%
“…[11] Along with these techniques the fabrication of microwire arrays in situ using electrochemical [12][13][14] and electroless [15][16][17] deposition in a porous template has proven to be a superior option for preparing more complex, higher-aspect-ratio 3D microtube and microwire arrays. [18] The formation of luminescent structures by incorporating rare-earth ions into a porous matrix using various techniques like ion-implantation, [19] electrochemical migration, [20] or the spin-on technique [21] has been demonIn this paper a novel technique for the production of aluminosilicate microtubes, which are shown to act as optical cylindrical microresonators, is described. The free-standing microtubes are fabricated by using vacuum-assisted wetting and filtration of silica gel through a microchannel glass matrix.…”
Section: Introductionmentioning
confidence: 99%
“…• C in sol--gel derived In 2 O 3 film [11], that is much lower than needed for erbium-implanted porous silicon [17] and other solids [18] or electrochemically doped porous silicon [19,20]. Er photoluminescence (PL) from the structure silicagel/porous silicon is strongly dependent on annealing conditions (temperature and atmosphere) and could be varied within 5 orders of magnitude [12].…”
Section: Porous Siliconmentioning
confidence: 99%