Electrochemical deposition of Fe–S–O thin films

Yang, Kai; Kawai, S.; Ichimura, M.

doi:10.1016/j.tsf.2014.10.072

Cited by 12 publications

(7 citation statements)

References 22 publications

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“…We also fabricated heterostructures consisting of ECD ZnO and FeS(O) films and observed rectification properties. 9,10) The ECD of FeS 2 was also reported by several other groups. [11][12][13] They all annealed deposited films in a sulfur atmosphere, and none of them reported the fabrication of diodes.…”

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confidence: 73%

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Mössbauer study of electrochemically deposited amorphous iron-sulfide-oxide thin films

Ichimura

Kondo

Kawai

et al. 2016

Jpn. J. Appl. Phys.

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Iron-sulfide-oxide thin films, which are promising candidates for solar cell materials, were deposited by electrochemical deposition. As-deposited and annealed films were characterized by Mössbauer spectroscopy, X-ray diffraction (XRD), and Raman scattering at room temperature. The as-deposited film is amorphous, and the oxygen content is about 1/4 of the sulfur content (S/Fe ≈ 1.5, O/Fe ≈ 0.4). The Mössbauer spectrum for the as-deposited film is a doublet with a broad line profile having hyperfine parameters similar to those of FeS2 pyrite or marcasite. This indicates that Fe atoms are in the Fe2+ low-spin state, as in FeS2.

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confidence: 73%

“…We have reported the electrochemical deposition (ECD) of iron-sulfide-oxide FeS(O) films. 9,10) The as-deposited films have a band gap of about 1.3 eV and exhibit p-type conductivity and photosensitivity. We also fabricated heterostructures consisting of ECD ZnO and FeS(O) films and observed rectification properties.…”

mentioning

confidence: 99%

Mössbauer study of electrochemically deposited amorphous iron-sulfide-oxide thin films

Ichimura

Kondo

Kawai

et al. 2016

Jpn. J. Appl. Phys.

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“…We observed rectifying properties for heterojunctions with ZnO. 18,19) Rectifying properties have been reported for FeS 2 -based p-n heterojunctions by a few other groups. 20,21) However, photovoltaic properties were not observed even for those rectifying p-n junctions.…”

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confidence: 72%

Fabrication of photovoltaic FeS_xO_y/ZnO heterostructures by electrochemical deposition

Ichimura

2019

Jpn. J. Appl. Phys.

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FeS x O y /ZnO heterostructures are fabricated by the electrochemical deposition (ECD) method. ZnO is first deposited by galvanostatic ECD on indium-tin-oxide (ITO) substrate and then FeS x O y is deposited on ZnO. In ECD of FeS x O y , three-step pulse bias is adopted in addition to DC bias. The addition of a complexing agent (tartaric acid) and stirring of the solution is also examined. With tartaric acid in the solution, FeS x O y deposition on ZnO failed. Without tartaric acid, FeS x O y /ZnO heterojunctions showing rectifying electrical properties are fabricated. Weak photovoltaic effects are confirmed only when FeS x O y is deposited by three-step pulse with stirring.

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“…Despite the rather high reactivity of tetra(tert-butoxy)tin, which is comparable to that of chlorosilane species [21],t he careful exclusion of any trace of water during the functionalization process leads to the clean formation of am onolayer (vide infra). Less reactive alkoxy species, as for examplet he tetra(tert-butoxy)zirconium homologue,c an bring about the formation of multilayers as the functionalizationi sc arried out in less strictly dry conditions,s imilarly to what happens with alkoxysilanes on oxide surfaces.…”

Section: Surface Functionalizationmentioning

confidence: 99%

Electrochemical and Surface Characterization of Dense Monolayers Grafted on ITO and Si/SiO₂ Surfaces via Tetra(tert‐Butoxy)Tin Linker

et al. 2016

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Indium tin oxide (ITO) and silicon with a thermally grown SiO2 layer (Si/SiO2) substrates have been functionalized by ferrocene bound through Sn(O)x (x=2 or 3) linkers preliminarly grafted on the surface by reaction of the terminal hydroxyl groups with tetra(tert‐butoxy)tin. The two steps modification of the surface was carried out by chemical vapour deposition metathesis reaction producing a self‐assembled monolayer of ferrocene. The ITO and Si/SiO2 thus functionalized have been characterized by voltammetric, amperometric, electrochemical impedance spectroscopy and scanning probe microscopy techniques which assessed the formation of a stable and rather compact covalently bound ferrocenyl monolayer with improved electron transfer properties.

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Electrochemical deposition of Fe–S–O thin films

Cited by 12 publications

References 22 publications

Mössbauer study of electrochemically deposited amorphous iron-sulfide-oxide thin films

Mössbauer study of electrochemically deposited amorphous iron-sulfide-oxide thin films

Fabrication of photovoltaic FeS_xO_y/ZnO heterostructures by electrochemical deposition

Electrochemical and Surface Characterization of Dense Monolayers Grafted on ITO and Si/SiO₂ Surfaces via Tetra(tert‐Butoxy)Tin Linker

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Electrochemical deposition of Fe–S–O thin films

Cited by 12 publications

References 22 publications

Mössbauer study of electrochemically deposited amorphous iron-sulfide-oxide thin films

Mössbauer study of electrochemically deposited amorphous iron-sulfide-oxide thin films

Fabrication of photovoltaic FeSxOy/ZnO heterostructures by electrochemical deposition

Electrochemical and Surface Characterization of Dense Monolayers Grafted on ITO and Si/SiO2 Surfaces via Tetra(tert‐Butoxy)Tin Linker

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Resources

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Fabrication of photovoltaic FeS_xO_y/ZnO heterostructures by electrochemical deposition

Electrochemical and Surface Characterization of Dense Monolayers Grafted on ITO and Si/SiO₂ Surfaces via Tetra(tert‐Butoxy)Tin Linker