“…To address these issues, we herein introduce a simple solution-based fabrication process with many advantages, such as simplicity, low processing temperature, low cost, stoichiometry control and its ability to produce uniform, chemically homogeneous film over large areas, for a solution-processed ZrO 2 gate insulator [17,18]. Although some reports on the investigation of solution-based gate dielectrics, little work on the evolution of optical and electrical properties of solution-based ZrO 2 gate dielectrics modulated by annealing temperature has been reported.…”