Electrically pumped single-photon sources in lateral p-i-n junctions

Xu, Xiulai; Williams, D. A.; Cleaver, J. R. A.

doi:10.1063/1.1803624

Cited by 49 publications

(52 citation statements)

References 19 publications

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“…It is difficult to run the correlation measurements in a cw mode, as reported previously using Si detectors 4,15 due to the very high dark count rate of the InGaAs APDs. In the experiment, a second order correlation function was obtained from the coincidences between two detectors as a function of time delay.…”

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confidence: 99%

“…Recently, investigations on single photon emission from semiconductor quantum dots ͑QDs͒ have concentrated on electrical pumping, [4][5][6][7] high repetition rates, 8 telecommunication wavelengths, [9][10][11][12][13] high temperature operation 14 and emission stability. 15 From a practical point of view, it is desirable to have a "plug and play" type, stable single photon source at telecommunication wavelengths, ideally with a high repetition rate.…”

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confidence: 99%

“…The lifetime obtained with a single exponential fit is about 1.5Ϯ 0.2 ns, which is similar to the other results on InAs QD with a confocal system. 4,9,6 For the two-pulse measurement, two optical pulses are combined into the input fiber and the separation between the two pulses is controlled by a motorized translation stage. The delay time between two pulses varies between 5 and 1 ns, corresponding to driving rates between 0.2 and 1 GHz.…”

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confidence: 99%

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“Plug and Play” single photons at 1.3μm approaching gigahertz operation

Brossard

Hammura

et al. 2008

Applied Physics Letters

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We report a "plug and play" single photon source, fully integrated with an optical fiber, emitting at 1.3 m. Micropillars were patterned on a single layer InAs quantum dot wafer to guarantee a single pillar per fiber core. The single exciton peak filtered with a tunable optical filter was fed to a Hanbury Brown and Twiss interferometer, and the second order correlation function at zero delay was less than 0.5, indicating single photon emission. The measured decay dynamics under double-pulse excitation show that the single photon device can be operated at speeds greater than 0.5 GHz. © 2008 American Institute of Physics. ͓DOI: 10.1063/1.2960549͔Single photon sources are in demand for quantum key distribution 1,2 and linear optical quantum computation. 3 Recently, investigations on single photon emission from semiconductor quantum dots ͑QDs͒ have concentrated on electrical pumping, 4-7 high repetition rates, 8 telecommunication wavelengths, 9-13 high temperature operation 14 and emission stability.15 From a practical point of view, it is desirable to have a "plug and play" type, stable single photon source at telecommunication wavelengths, ideally with a high repetition rate.In our previous work, 15 we have demonstrated a plug and play single photon source integrated with an optical fiber system. In this system, a bundle of single mode optical fibers ͑around 600͒ are bound together at one end and polished. The polished end of the fiber bundle is directly mounted on top of a 5 ϫ 5 mm 2 wafer with a very low quantum dot density. All fibers in the other end are free and can be connected to a wavelength division multiplexing ͑WDM͒ device with two separate output fibers. One of these two fibers ͑input fiber͒ carries the excitation light and the other ͑output fiber͒ carries the emitted light. The exciton emission collected from a single QD via one of the fibers in the fiber bundle exhibits single photon emission. Great stability of nearly ͑but not limited to͒ one month has been demonstrated. 15 However, the emission wavelength from InAs QD was around 920 nm. In this work, we realize a plug and play single photon source at telecommunication wavelengths using the same system. The repetition rate of this type of photon source can be higher than 0.5 GHz, which is confirmed with two-pulse lifetime measurements.The InAs QD wafer with a 1.3 m wavelength emission is grown by molecular-beam expitaxy with an InGaAs capping layer. The QD layer is embedded in a 1-lambda cavity between one-period ͑top͒ and 15-period ͑bottom͒ GaAs/ Al 0.9 Ga 0.1 As distributed Bragg reflectors, in order to enhance the extraction efficiency. The collection efficiency of the fiber with a numerical aperture of 0.12 was 0.69%, calculated with the method described in Ref. 16. To achieve very low QD density ͑around 2 ϫ 10 8 dots/ cm 2 ͒, an ultralow growth rate was used for the sample growth.17 With this growth technique, single photon emission at 1.3 m was demonstrated using a confocal system with either InGaAs ͑Ref. 18͒ or superconducting single-photon d...

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“Plug and Play” single photons at 1.3μm approaching gigahertz operation

Brossard

Hammura

et al. 2008

Applied Physics Letters

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“…1 Self-assembled InAs/GaAs quantum dots (QDs) have been investigated intensively to implement quantum information and quantum computation, such as, single-photon sources [1][2][3][4][5], exciton qubits and spin qubits [6][7][8], quantum logic gates [9][10][11][12], spin-photon entanglement interfaces [13][14][15], and quantum memories [16]. Among those investigations, single spins in single dots are of particular interest because of their relatively long coherence time at low temperature [7,17].…”

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“…To achieve single charge or spin states, a precise charge control with certain spin in single quantum dots is on demand. Charges in single InAs quantum dots can be injected by resonant [18,19] or non-resonant [20,21] optical pumping, or by electrical pumping [3], and then they can be manipulated by applying an electric field [20,22] or an external magnetic field [23,24] across the quantum dots.…”

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Charge state control in single InAs/GaAs quantum dots by external electric and magnetic fields

Tang

Cao

Gao

et al. 2014

Applied Physics Letters

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We report a photoluminescence (PL) spectroscopy study of charge state control in single selfassembled InAs/GaAs quantum dots by applying electric and/or magnetic fields at 4.2 K. Neutral and charged exciton complexes were observed under applied bias voltages from -0.5 V to 0.5 V by controlling the carrier tunneling. The highly negatively charged exciton emission becomes stronger with increasing pumping power, arising from the fact that electrons have a smaller effective mass than holes and are more easily captured by the quantum dots. The integrated PL intensity of negatively charged excitons is affected significantly by a magnetic field applied along the sample growth axis. This observation is explained by a reduction in the electron drift velocity caused by an applied magnetic field, which increases the probability of non-resonantly excited electrons being trapped by localized potentials at the wetting layer interface, and results in fewer electrons distributed in the quantum dots. The hole drift velocity is also affected by the magnetic field, but it is much weaker.

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Nanowire Quantum Dots

Aichele

Tribu

Sallen

et al. 2010

Nanotechnologies for the Life Sciences

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In this chapter, current trends in the development and application of quantum dots (QDs) inserted in semiconductor nanowires are reviewed. The epitaxial growth of nanowires is explained, based on the example of CdSe QDs included into defect‐free ZnSe nanowires. Finally, an overview is provided of the diverse applications in the life sciences, nanoelectronics and quantum optics, especially on their use as sources for single photons at high temperature.

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Electrically pumped single-photon sources in lateral p-i-n junctions

Cited by 49 publications

References 19 publications

“Plug and Play” single photons at 1.3μm approaching gigahertz operation

“Plug and Play” single photons at 1.3μm approaching gigahertz operation

Charge state control in single InAs/GaAs quantum dots by external electric and magnetic fields

Nanowire Quantum Dots

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