Electrical Transport Properties of Undoped CVD Diamond Films

Pan, Lei; Pianetta, P.; Kania, D. R.; Han, Sewoon; Landen, O. L.; Ager, Joel W.; Landstrass, M. I.

doi:10.1126/science.255.5046.830

Cited by 56 publications

(15 citation statements)

References 20 publications

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“…First, structural defects in the BP film like those caused by the lattice mismatch with the Si substrate, differences between the coefficients of thermal expansion for Si and BP, or possibly the mosaic-spread of the BP thin-film, may affect the electronic properties of the film [ 15,20,21]. Secondly, short trapping lifetimes may be produced by deep level electronic , , states in the BP arising from small concentrations of impurities [ 14,221 or shallow-level traps produced by deviations in stochiometry from mono-boron-phosphide [22].…”

Section: Scientific Approach and Resultsmentioning

confidence: 99%

Fabrication of boron-phosphide neutron detectors

Fitzsimmons¹,

Pynn²

1997

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Boron phosphide is a potentially viable candidate for high neutron flux neutron detectors. We have explored chemical vapor deposition methods to produce such detectors and have not been able to produce good boron phosphide coatings on silicon carbide substrates. However, semi-conducting quality films have been produced. Further testing is required. Background and Research ObjectivesLANL has an immediate opportunity to take the lead in the development of a new generation of neutron detectors. These detectors will be solid-state devices using the semiconductor boron-phosphide (BP) as the detection and charge collection medium. A collaboration between two small businesses, Devcom Inc. (manufacturers of CVD films) and RMD Inc. (manufacturers of radiation detectors), has recently demonstrated the detection of neutrons with a BP diode. In their diode, the thickness of the depletion layer was only lOpm, which is about 20 times smaller than required for efficient neutron detection. In order to make thicker depletion layers, the relationship between the electronic properties of BP t h i n -f i i with their synthesis, microstructures, and chemistry (impurity contents) needs to be understood. Since this problem is complex and interdisciplinary, Devcom and RMD need the assistance of a larger partner, like LANL, who has available a vast array of expertise and equipment.Work is to develop high quality BP semiconducting thin-films for use as neutron detectors.The value to the laboratory includes:The development of a new generation of neutron detectors that are efficient, inexpensive and capable of measuring high intensities, complements the objectivestated in the laboratory's Strategic Plan to develop a 1-MW spallation neutron. The CVD techniques developed to make high quality BP semiconductors might be utilized to fabricate thin-films of nanocrystalline BP, since nanocrystalline fidms of other materials (Ir and Rh) have been successfully fabricated using CVD (D.C.S.). Since nanocrystalline BP is anticipated to be mechanically strong, resistant to chemical attack and lightweight, this material has commercial potential as a tribological coating and is of interest to the lab's Advanced Materials and Processes initiative in. Our project complements this interest.

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Section: Scientific Approach and Resultsmentioning

confidence: 99%

Fabrication of boron-phosphide neutron detectors

Fitzsimmons¹,

Pynn²

1997

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“…Currently, in spite of the general appeal of synthetic diamond for UV detection, Chemical Vapor Deposition (CVD) growth techniques lead to polycrystalline films with a relatively high concentration of grain boundaries and crystal defects, which affect their photoconductive properties [7,8]. The phase purity, the sample preferential orientation [9] and the concentration of crystallographic [10] defects give rise to localized electronic states within gap and, consequentially, short carrier lifetime, poor mobility and collection lengths.…”

Section: Introductionmentioning

confidence: 99%

Structural and Functional Characterization of HPHT Diamond Crystals Used in Photoconductive Devices

Pace

Vinattieri

Pini

et al. 2000

phys. stat. sol. (a)

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Diamond films are extensively studied for applications as functional material for UV photoconductors. CVD-grown polycrystalline diamond films show very interesting performances, but their complete exploitation is actually limited by a slow time response if compared to other materials, by a relatively high concentration of structural defects, impurities and grain boundaries, which may affect the collection length of photogenerated charges. High-quality single crystal diamonds could solve some of these problems. The absence of grain boundaries can produce longer collection lengths. The nitrogen and impurity contents can be reduced and then large type-IIa diamond single-crystals can be obtained. In this work, a detailed structural and functional characterization of type Ib HPHT diamond crystals has been carried out and the results have been compared to similar characterizations of CVD films to evaluate the different behavior, taking also into account that these high pressure high temperature (HPHT) diamond crystals contain several tens ppm of nitrogen.

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“…The diamond is characterized by exceptional mechanical, thermal, optical properties and excellent electrical properties such as a high carrier mobility and high breakdown voltage [1,2]. Nowadays, due to the fast development of diamond synthesis from vapor phase, growing diamonds of desired quality and reproducibility became possible.…”

Section: Introductionmentioning

confidence: 99%

Thermoluminescence properties of undoped diamond films deposited using HF CVD technique

Paprocki

Winiecki

Kabacińska

et al. 2017

Materials Science-Poland

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Natural diamond has been considered as a perspective material for clinical radiation dosimetry due to its tissuebiocompatibility and chemical inertness. However, the use of natural diamond in radiation dosimetry has been halted by the high market price. The recent progress in the development of CVD techniques for diamond synthesis, offering the capability of growing high quality diamond layers, has renewed the interest in using this material in radiation dosimeters having small geometrical sizes. Polycrystalline CVD diamond films have been proposed as detectors and dosimeters of β and α radiation with prospective applications in high-energy photon dosimetry. In this work, we present a study on the TL properties of undoped diamond film samples grown by the hot filament CVD (HF CVD) method and exposed to β and α radiation. The glow curves for both types of radiation show similar character and can be decomposed into three components. The dominant TL peaks are centered at around 610 K and exhibit activation energy of the order of 0.90 eV.

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Electrical Transport Properties of Undoped CVD Diamond Films

Cited by 56 publications

References 20 publications

Fabrication of boron-phosphide neutron detectors

Fabrication of boron-phosphide neutron detectors

Structural and Functional Characterization of HPHT Diamond Crystals Used in Photoconductive Devices

Thermoluminescence properties of undoped diamond films deposited using HF CVD technique

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