Electrical transport properties of focused ion beam lithography Au contacts on PbTiO₃ nanorods

Abstract

PbTiO 3 nanorods with tetragonal phase were synthesized by hydrothermal method and heat treatment, and temperature-dependent electrical transport properties of individual PbTiO 3 nanorod were investigated. The results show that the conductivities of PbTiO 3 nanorods are gradually enhanced with temperature increasing from 77.4 to 295 K, and exhibit the typical nonlinear I-V characteristics. The barrier height between Au electrode and nanorod is reduced from 0.137 to 0.088 eV with increasing bias from 0.2 to 1 V. The corresponding values of thermal activation energies are 0.172 and 0.06 eV below the conduction band for 180-295 and 77.4-180 K, respectively. This semiconductor-like behavior may result from the larger number of surface defects or localized states in the amorphorized PbTiO 3 .

Progress in design, nanofabrication and performance of metalenses

“…However, its application is restricted by high-cost equipment, stringent requirements of the use environment, and limited availability of suitable materials. New lithography technologies have been investigated, which include immersion lithography [95], extreme UV lithography [96,97], EBL [98,99], nanoimprint lithography (NIL) [100][101][102], laser direct write lithography [103,104], and focused ion beam lithography [105,106]. Shen et al [107] combined standard photolithography with reactive ion etching (RIE) to produce a tinted liquid crystal integrated metalens.…”

One‐dimensional electrospun ceramic nanomaterials and their sensing applications

“…Wearable UV/visible photodetectors with high efficiency, high response range, and high flexibility have been intensively studied in recent years 82–84 . Since 2003, researchers have applied electrospinning to the preparation of doped semiconductor nanofibers, after which FETs are assembled to conduct their I–V measurements and electron‐mobility performance 25,34,38,85 .…”

“…Wearable UV/visible photodetectors with high efficiency, high response range, and high flexibility have been intensively studied in recent years. [82][83][84] Since 2003, researchers have applied electrospinning to the preparation of doped semiconductor nanofibers, after which FETs are assembled to conduct their I-V measurements and electron-mobility performance. 25,34,38,85 Subsequently, Lin et al 85 employed a facile method to assemble a single aluminum-doped zinc oxide (AZO) nanowire into a photoelectric switch and memory (Figure 10).…”