Electrical transport and thermoelectric properties of PbTe doped with Sb2Te3 prepared by high-pressure and high-temperature

Electrical and thermoelectric properties of PbSe doped with Sm

“…This is expectable, because with Sm doping Pb 2+ ions are substituted by Sm 3+ ions [37] and the resultant SmSe system crystallizes also in NaCl structure [37,38]. The absence of the diffraction peaks corresponding to the ternary compounds matches well with Su et al [33] whom pronounced that the ternary compounds of doped IV-VI compounds should not be formed with high cooling rate, small synthetic pressures and small dopant amounts which are the conditions of sample prepa- ration in this work. Based on these results, the investigated samples are single phase PbSe while samarium is the source of dopant for PbSe.…”

“…Also, the physical property of Pb 1−x Eu x Se is the rapid increase in the energy gap with increasing Eu content [10,[30][31][32]. Another evidence for the influence of the doping process on the thermoelectric properties of IV-VI compounds was introduced by Su et al [33]. They announced that for n-type lead telluride (PbTe) compounds doped with Sb 2 Te 3 , the electrical conductivity and the absolute value of Seebeck coefficient increase with increasing the Sb 2 Te 3 content.…”

Composition-dependent electrical transport properties of Pb50Te52 doped with PbI2 prepared by HPHT

“…3 and 4, both the electrical resistivity and the Seebeck coefficient are very sensitivity to the increase of trace PbI 2 . The phenomenon is consistent with our previous results on PbTe doped with Bi 2 Te 3 and Sb 2 Te 3 [16,17]. Here, we consider that the high pressure might play a primary role in achieving giant Seebeck coefficient and heavily doped semiconductor.…”

“…The synthetic temperature was set at 1200 K to keep the sample melting adequately, followed by quenching with the rate of 50 K/s. Referring to our previous work [16,17,24], the synthesis time was selected as 15 min in this work. The synthetic pressure was set at 3.5 GPa, at which the samples gained the ideal properties.…”

“…The excess Pb or Te may lead to variation of conductivity type and the electrical transport properties, improve the power factor of PbTe. In addition, doping is also an effective method to improve thermoelectric properties and obtain heavily doped semiconductor, such as group III elements (In and Ga) [15] and compounds Sb 2 Te 3 and Bi 2 Te 3 [16,17]. Doping with these elements effectively obtained unusual effects that were not characterized by the non-doped materials.…”