Electrical switching and thermal studies on bulk Ge–Te–Bi glasses

Das, Chandasree; Rao, G. Mohan; Asokan, S.

doi:10.1016/j.jnoncrysol.2010.09.046

Cited by 23 publications

(2 citation statements)

References 44 publications

(53 reference statements)

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“…This trend is a common feature in many memory switching devices above room temperature [26,27] and can be explained on the basis of a configurationally free-energy diagram [28], according to which the decrease in V th is due to the decrease of the energy barrier required for crystallization of a sample with the increase in temperature. Also, at the higher temperature, the charged defect centers are filled up by thermally excited charge carriers, which are in addition to fieldinjected carriers, resulting to the decrease in switching voltage [29,30]. Plots of lnV th versus 1000/T for the studied compound is presented as inset in Fig.…”

Section: Switching Phenomenonmentioning

confidence: 99%

Memory switching of ZnGa2Te4 thin films

et al. 2012

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Electrical and switching property of amorphous defect chalcopyrite ZnGa 2 Te 4 thin films prepared by thermal evaporation technique has been studied. The elemental chemical compositions of the prepared bulk as well as the asdeposited film were determined by means of energy dispersive X-ray spectrometry. X-ray diffraction pattern revealed that the powder compound is polycrystalline and the asdeposited and the annealed films at t a B 548 K have the amorphous phase, while that the annealed at t C 573 K are polycrystalline with a single phase of a defect chalcopyrite structure similar to that of the synthesized material. The great advantage of this material is the capability to appear in two different phases, the amorphous and the crystalline phases, with rather different electrical properties. Both dynamic and static I-V characteristics and the switching phenomenon at 601 nm are investigated. The threshold switching mechanism was explained by a thermal model of switching, i.e., joule heating with an electrically conducting channel. ZnGa 2 Te 4 is good candidate in phase change memory device.

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Section: Switching Phenomenonmentioning

confidence: 99%

Memory switching of ZnGa2Te4 thin films

et al. 2012

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“…On the other hand, the memory switched samples (Figure (c and d)) are found to be irreversible. This may be due to the additional thermal effects which lead to the creation of a conducting crystalline channel in the electrode regions . Lokesh et al confirmed that, most of the Te‐rich chalcogenide glasses are exhibiting memory switching; and this is may be because of their high conductance which results in a larger power dissipation, as well as to their easy crystallizability (low T c values).…”

Section: Resultsmentioning

confidence: 99%

Structural, Thermal, Electrical, and Negative Resistance Properties of (Se₆₀Te₄₀)_xTl_(100−x) Chalcogenide Glasses

Ahmed

El-Ghamaz

Abdel-Wahab

2018

Physica Status Solidi (a)

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Bulk (Se 60 Te 40 ) x Tl (100Àx) glass ( x ¼ 80, 75, 70, and 60 mol.%) is prepared by the melt quenching technique. The density of the samples is found to increase with increasing the Tl content in the glass. Only the sample (Se 60 Te 40 ) 80 Tl 20 is confirmed to be amorphous according to XRD results, while some nanocrystals are grown and increase with increasing the Tl content in the glass. Average bond energy is calculated and found to decrease with increasing the Tl content. Thermal characteristics and responses of the glass are investigated by DSC and TGA measurements. The electrical measurements are carried out in the temperature range 100-300 K. The direct current (dc) conductivity is discussed in the light of the variable range hopping (VRH) model with activation energies decreasing with the increase of the Tl content in the glass. The alternating current (ac) conductivity is discussed and fitted for the sample (Se 60 Te 40 ) 80 Tl 20 on the bases of the Correlated Barrier Hopping (CBH) model with N % 2 Â 10 19 cm À3 eV À1 and the τ o % 10 À13 s. Different types of switching modes with threshold voltage are obtained in the range 5-17 V. F th is found to decrease with increasing the average bond energy, and increase with increasing the sample thickness indicating that the mechanism of switching is of electrothermal origin.

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Studies on electrical switching behavior and optical band gap of amorphous Ge–Te–Sn thin films

et al. 2011

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Electrical switching and thermal studies on bulk Ge–Te–Bi glasses

Cited by 23 publications

References 44 publications

Memory switching of ZnGa2Te4 thin films

Memory switching of ZnGa2Te4 thin films

Structural, Thermal, Electrical, and Negative Resistance Properties of (Se₆₀Te₄₀)_xTl_(100−x) Chalcogenide Glasses

Studies on electrical switching behavior and optical band gap of amorphous Ge–Te–Sn thin films

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Electrical switching and thermal studies on bulk Ge–Te–Bi glasses

Cited by 23 publications

References 44 publications

Memory switching of ZnGa2Te4 thin films

Memory switching of ZnGa2Te4 thin films

Structural, Thermal, Electrical, and Negative Resistance Properties of (Se60Te40)xTl(100−x) Chalcogenide Glasses

Studies on electrical switching behavior and optical band gap of amorphous Ge–Te–Sn thin films

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Structural, Thermal, Electrical, and Negative Resistance Properties of (Se₆₀Te₄₀)_xTl_(100−x) Chalcogenide Glasses