Electrical properties of thin chromium films

Elhiti, Mohamed; Ahmed, M. A.; El-Shabasy, M.

doi:10.1007/bf00725514

Cited by 8 publications

(4 citation statements)

References 13 publications

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“…Both figures show the same nature of variation in conductivity with frequency, which is the typical characteristic behavior of NZFO [41,42,[52][53][54], whereas that for the ferrite/SiO 2 ratio is different in the two graphs. Figure 12 shows that conductivity increases with increase in ferrite content while Figure 13 shows behavior in the opposite way.…”

Section: Electric Conductivitymentioning

confidence: 82%

“…The ac conductivity can be determined from the dielectric constant and frequency using the relation σ ac = ωε ′′ = ωε ′ tan δ , where ε ′ ,ε ′′ , ω , and tan δ are the real and imaginary parts of the dielectric constant, angular frequency of the electric field, and the loss tangent, respectively. Further, σ ac is attributed to the dielectric relaxation caused by the localized charge carriers and obeys a power law of the form σ ac = Aω s , where A is a constant for a particular temperature and s represents the degree of interaction between the mobile ions and the environment surrounding them [41,42].…”

Section: Electric Conductivitymentioning

confidence: 99%

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Influence of silicon dioxide medium on the structural and electrical properties of nickel zinc ferrite

George¹,

Eapen²

2017

Turk J Phys

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Section: Electric Conductivitymentioning

confidence: 82%

Section: Electric Conductivitymentioning

confidence: 99%

Influence of silicon dioxide medium on the structural and electrical properties of nickel zinc ferrite

George¹,

Eapen²

2017

Turk J Phys

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“…In this regard by controlling the coating deposition parameters high hardness and good wear resistance can be obtained. Chromium thin films are characterized either entirely on the electrical properties [5][6][7][8][9][10] or entirely on structural properties [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Optical and structural properties of Cr and Ag thin films deposited on glass substrate

Ahmed¹,

Nasim²,

Khan³

et al. 2016

IOP Conf. Ser.: Mater. Sci. Eng.

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Abstract. Most of the rotating or noting patterns are being developed by using silver plating through chemical coating. Silver layers deteriorate with the passage of time and become less reflective while undergo through cleaning process due to its softness and the results become unpredictable. In this paper an alternate method for development of above mentioned pattern has been demonstrated. Chromium (Cr) and Silver (Ag) thin films of 200nm and 160nm thick respectively have been realized using electron beam evaporation (PVD technique) on quartz substrate. Structural analysis has been carried out by XRD and SEM while optical transmission/reflection has been studied using spectrophotometer. XRD analysis shows that Ag coated thin films exhibit FCC structure while Cr coated thin films reveals a BCC structure. SEM analysis shows almost smooth and uniform surfaces in both cases. After passing through high and low temperature cycles it was found that the results of pattern structures developed by chromium coating were more reliable than obtained through silver platting process.

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“…Chromium oxide has a resistance that is tunable through oxygen doping, as well as showing good adhesion to silicon substrates; it is also easy to pattern by chemical etching or lift-off. The electrical and mechanical characteristics of chromium [19][20][21], Cr 2 O 3 [22], and CrO 2 [23] are all welldocumented, due to the numerous applications of these materials in microcoating and magnetic tape manufacture. Less work has focused on amorphous chromium oxide films.…”

Section: Introductionmentioning

confidence: 99%

Compact chromium oxide thin film resistors for use in nanoscale quantum circuits

Nash

Fenton

Constantino

et al. 2014

Journal of Applied Physics

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We report on the electrical characterisation of a series of thin chromium oxide films, grown by dc sputtering, to evaluate their suitability for use as on-chip resistors in nanoelectronics. By increasing the level of oxygen doping, the room-temperature sheet resistance of the chromium oxide films was varied from 28 Ω/ to 32.6 kΩ/ . The variation in resistance with cooling to 4.2 K in liquid helium was investigated; the sheet resistance at 4.2 K varied with composition from 65 Ω/ to above 20 GΩ/ . All of the films measured displayed ohmic behaviour at all measured temperatures. For on-chip devices for quantum phase-slip measurements using niobium-silicon nanowires, interfaces between niobium-silicon and chromium oxide are required. By characterising the interface contact resistance, we found that a gold intermediate layer is favourable: the specific contact resistivity of chromium-oxide-to-gold interfaces was 0.15 mΩcm 2 , much lower than the value for direct chromiumoxide to niobium-silicon interfaces, 65 mΩcm 2 . We conclude that these chromium oxide films are suitable for use in nanoscale circuits as high-value resistors, with resistivity tunable by oxygen content.

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Electrical properties of thin chromium films

Cited by 8 publications

References 13 publications

Influence of silicon dioxide medium on the structural and electrical properties of nickel zinc ferrite

Influence of silicon dioxide medium on the structural and electrical properties of nickel zinc ferrite

Optical and structural properties of Cr and Ag thin films deposited on glass substrate

Compact chromium oxide thin film resistors for use in nanoscale quantum circuits

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