1993
DOI: 10.1016/0038-1098(93)90196-t
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Electrical properties of bismuth selenide (Bi2Se3) thin films prepared by reactive evaporation

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Cited by 39 publications
(11 citation statements)
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“…Bi 2 Se 3 ordinarily forms n-type specimens, so that more literature on n-type is available. Typical n-type mobilities at or even somewhat above these concentrations [35][36][37][38][39][40][41] are in this range or higher, so that assuming no great asymmetry in n-type vs p-type scattering rates, the assumed p-type mobilities are reasonable. The assumed carrier concentration dependence implies that mobility increases significantly as carrier concentration decreases, which is generally true until one reaches a limiting value, as in Ref.…”
Section: Calculation Of Optimal Doping Ranges and Potential Perfomentioning
confidence: 97%
“…Bi 2 Se 3 ordinarily forms n-type specimens, so that more literature on n-type is available. Typical n-type mobilities at or even somewhat above these concentrations [35][36][37][38][39][40][41] are in this range or higher, so that assuming no great asymmetry in n-type vs p-type scattering rates, the assumed p-type mobilities are reasonable. The assumed carrier concentration dependence implies that mobility increases significantly as carrier concentration decreases, which is generally true until one reaches a limiting value, as in Ref.…”
Section: Calculation Of Optimal Doping Ranges and Potential Perfomentioning
confidence: 97%
“…To date, all ARPES measurements on Bi 2 Q 3 (Q=Se, Te) were done on cleaved single crystal surfaces, while for transport measurements or device applications, thin films are desired. In the literature, many works have already been done in the preparation of Bi 2 Q 3 thin films by various techniques, such as electrodeposition [11,12], chemical bath deposition (CBD) [13], solvo thermalization [14], successive ionic layer adsorption and reaction (SILAR) [15], thermal evaporation [16], reactive evaporation [17], metal-organic chemical vapor deposition [18] and compound evaporation [19,20], etc. However, these methods normally produce polycrystalline films aiming for thermoelectric applications, which are far from meeting the present requirements.…”
Section: Applicationsmentioning
confidence: 99%
“…The effective cooling is proportional to the number of n-p materials used in the module. Geometric dimensions and the number of the thermocouples have significant influence on thermoelectric performance and the mechanical reliability The preferred materials for these devices are bismuth selenide (Bi 2 Se 3 ) [10], bismuth telluride (Bi 2 Te 3 ) and antimony telluride (Sb 2 Te 3 ) [11], for their stable performance from 180 to 400 K.…”
Section: Thermoelectric Devices (Teds)mentioning
confidence: 99%