“…To date, all ARPES measurements on Bi 2 Q 3 (Q=Se, Te) were done on cleaved single crystal surfaces, while for transport measurements or device applications, thin films are desired. In the literature, many works have already been done in the preparation of Bi 2 Q 3 thin films by various techniques, such as electrodeposition [11,12], chemical bath deposition (CBD) [13], solvo thermalization [14], successive ionic layer adsorption and reaction (SILAR) [15], thermal evaporation [16], reactive evaporation [17], metal-organic chemical vapor deposition [18] and compound evaporation [19,20], etc. However, these methods normally produce polycrystalline films aiming for thermoelectric applications, which are far from meeting the present requirements.…”