2007
DOI: 10.1016/j.jnoncrysol.2006.09.059
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Electrical properties of a-Se85−xTe15Snx thin films

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Cited by 13 publications
(2 citation statements)
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“…Various workers [24][25][26][27] reported the temperature dependence of conductivity in amorphous semiconductors and studied the conduction mechanism in these chalcogenides. The conduction in chalcogenide glasses is intrinsic [28,29] and that the Fermi level is close to the midway of the energy gap.…”
Section: Electrical Studiesmentioning
confidence: 99%
“…Various workers [24][25][26][27] reported the temperature dependence of conductivity in amorphous semiconductors and studied the conduction mechanism in these chalcogenides. The conduction in chalcogenide glasses is intrinsic [28,29] and that the Fermi level is close to the midway of the energy gap.…”
Section: Electrical Studiesmentioning
confidence: 99%
“…In order to overcome this problem, to enhance the thermal stability and to enlarge the domain of applications, it is necessary to add a third element (like Sn) as a chemical modifier which expands the glass forming area and also creates compositional and configurational disorder as comparing with the binary Se-Te glassy alloys. The substitution of some Te atoms by Sn atoms causes variation in the physical properties of the primary binary compound [23].…”
Section: Introductionmentioning
confidence: 99%