Electrical properties of a highly oriented, textured thin film of the ionic conductor Gd:CeO2−δ on (001) MgO

Chen, L.; Chen, C. L.; Chen, X.; Donner, W.; Liu, S. W.; Lin, Yuan; Huang, D. X.; Jacobson, Allan J.

doi:10.1063/1.1629378

Cited by 54 publications

(58 citation statements)

References 11 publications

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“…2009, 19, 1713-1719 ß 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim enhancement at low pO 2 can be attributed to electronic conductivity related to Ce reduction at low pO 2 . [13,14,18,34] The typical process of ceria reduction may be written as:…”

Section: Resultsmentioning

confidence: 99%

Fabrication and Electrochemical Properties of Epitaxial Samarium‐Doped Ceria Films on SrTiO₃‐Buffered MgO Substrates

Sanna

Esposito

Pergolesi

et al. 2009

Adv Funct Materials

105

109

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Thin films of samarium‐oxide‐doped (20 mol%) ceria (SDC) are grown by pulsed‐laser deposition (PLD) on (001) MgO single‐crystal substrates. SrTiO3 (STO) prepared by PLD is used as a buffer layer on the MgO substrates to enable epitaxial growth of the fluorite‐structured SDC film; the STO layer provides a proper crystalline match between SDC and MgO, resulting in highly crystalline, epitaxial SDC films grown in the (001) orientation. Film conductivity is evaluated by electrochemical impedance spectroscopy measurements, which are performed at various temperatures (400–775 °C) in a wide range of oxygen partial pressure (pO2) values (10−25−1 atm) in order to separate ionic and electronic conductivity contributions. At 700 °C, SDC/STO films on (100) MgO exhibit a dominant ionic conductivity of about 7 × 10−2 S cm−1, down to pO2 values of about 10−15 atm. The absence of grain boundaries make the SDC/STO/MgO heterostructures stable to oxidation‐reduction cycles at high temperatures, in contrast to that observed for the more disordered SDC/STO films, which degraded after hydrogen exposure.

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Section: Resultsmentioning

confidence: 99%

Fabrication and Electrochemical Properties of Epitaxial Samarium‐Doped Ceria Films on SrTiO₃‐Buffered MgO Substrates

Sanna

Esposito

Pergolesi

et al. 2009

Adv Funct Materials

105

109

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“…GDC films with a columnar structure and 170 nm thickness were epitaxially grown on MgO (001) single crystals by pulsed laser ablation [40]. The large lattice mismatch of 28.8% created various defects at the film/MgO interface, as verified by high-resolution transmission electron microscopy (HRTEM).…”

Section: Heterostructures Reduced At Minimum: Single Thin Filmsmentioning

confidence: 99%

Ionic conductivity in oxide heterostructures: the role of interfaces

Fabbri

Pergolesi

Traversa

2010

Science and Technology of Advanced Materials

154

120

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Rapidly growing attention is being directed to the investigation of ionic conductivity in oxide film heterostructures. The main reason for this interest arises from interfacial phenomena in these heterostructures and their applications. Recent results revealed that heterophase interfaces have faster ionic conduction pathways than the bulk or homophase interfaces. This finding can open attractive opportunities in the field of micro-ionic devices. The influence of the interfaces on the conduction properties of heterostructures is becoming increasingly important with the miniaturization of solid-state devices, which leads to an enhanced interface density at the expense of the bulk. This review aims to describe the main evidence of interfacial phenomena in ion-conducting film heterostructures, highlighting the fundamental and technological relevance and offering guidelines to understanding the interface conduction mechanisms in these structures.

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“…Secondly, thin film technologies are employed to reduce the electrolyte thickness to the sub-µm level, as the ohmic resistance scales linearly with the thickness. However, it was shown that transport properties of thin ceria-based electrolytes depart vastly from bulk, microcrystalline materials [5][6][7][8][9][10][11][12][13]. For example, a wide range of conductivity levels (from 3.4 × 10 −6 S/cm [12] to 7 × 10 −3 S/cm [8] both at 500°C) and a significant variation of activation energy (from 0.81 eV [10] to 1.3 eV [9]) have been reported.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of gadolinia doped ceria films grown by pulsed laser deposition

Rodrigo¹,

Heiroth²,

Lundberg³

et al. 2010

Appl. Phys. A

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Electrical characterization of 10 mol% gadolinia doped ceria (CGO10) films of different thickness prepared on MgO (100) substrates by pulsed laser deposition is presented. Dense polycrystalline and textured films characterized by fine grains (grain sizes <18 nm and <64 nm for a 20-nm and a 435-nm film, respectively) are obtained in the deposition process. Grain growth is observed under thermal cycling between 300-800°C, as indicated by X-ray based grain-size analysis. However, the conductivity is insensitive to this microstructural evolution but is found to be dependent on the sample thickness. The conductivity of the nanocrystalline films is lower (7.0 × 10 −4 S/cm for the 20-nm film and 3.6 × 10 −3 S/cm for the 435-nm film, both at 500°C) than that of microcrystalline, bulk samples (6 × 10 −3 S/cm at 500°C). The activation energy for the conduction is found to be 0.83 eV for the bulk material, while values of 1.06 eV and 0.80 eV are obtained for the 20 nm film and 435 nm film, respectively. The study shows that the ionic conductivity prevails in a broad range of oxygen partial pressure, for example down to about 10 −26 atm at 500°C.

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Electrical properties of a highly oriented, textured thin film of the ionic conductor Gd:CeO2−δ on (001) MgO

Cited by 54 publications

References 11 publications

Fabrication and Electrochemical Properties of Epitaxial Samarium‐Doped Ceria Films on SrTiO₃‐Buffered MgO Substrates

Fabrication and Electrochemical Properties of Epitaxial Samarium‐Doped Ceria Films on SrTiO₃‐Buffered MgO Substrates

Ionic conductivity in oxide heterostructures: the role of interfaces

Electrical characterization of gadolinia doped ceria films grown by pulsed laser deposition

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Electrical properties of a highly oriented, textured thin film of the ionic conductor Gd:CeO2−δ on (001) MgO

Cited by 54 publications

References 11 publications

Fabrication and Electrochemical Properties of Epitaxial Samarium‐Doped Ceria Films on SrTiO3‐Buffered MgO Substrates

Fabrication and Electrochemical Properties of Epitaxial Samarium‐Doped Ceria Films on SrTiO3‐Buffered MgO Substrates

Ionic conductivity in oxide heterostructures: the role of interfaces

Electrical characterization of gadolinia doped ceria films grown by pulsed laser deposition

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Product

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Fabrication and Electrochemical Properties of Epitaxial Samarium‐Doped Ceria Films on SrTiO₃‐Buffered MgO Substrates

Fabrication and Electrochemical Properties of Epitaxial Samarium‐Doped Ceria Films on SrTiO₃‐Buffered MgO Substrates