volume 53, issue 3, P031302 2014
DOI: 10.7567/jjap.53.031302
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Abstract: Thermal quenching of luminescence of Er dopants in Si nano-crystals (Si-nc's) was investigated employing an impedance model for the analysis of photo-injected charges. Relaxation response indicated that Er doping forms not only optical centers but also trapping centers near the Si-nc's. The response time constant of trapped charges was dependent on temperature, with the dependence correlating to thermal quenching. These findings indicate that quenching occurs by trapping followed by consumption of charges. Th…

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