Electrical Characteristics of ZnTe Thermoelectric Thin Films

Abstract

Thermal coating growth of ZnTe thermoelectric films were deposited on n-type Si substrate is studied. Structural analysis through x-ray diffraction (XRD) and scanning electron microscopy (SEM) were sensitive to the RTA treatment. The electrical properties and microstructure of these films were investigated with special emphasis on the effects of various annealing temperatures from 600°C to 800°C by RTA technique. The highest carrier concentration, lowest resistivity and mobility at an annealing temperature of 700°C are 3.5×1015cm-3, 0.25 Ω-cm, and 49 cm2V-1S-1. The resultant electrical properties have made ZnTe films as very interesting materials for thermoelectric device applications.

Sustainable Thermoelectric Materials Predicted by Machine Learning

“…Here, we immediately found five publications of materials inves-tigated for their TE properties that were not included in our original training dataset: Namely, ZnTe (despite its large bandgap), Gd 3 Al x , ZrAl 3 , GdAg, and YbAl 3 . [45][46][47][48][49] This already hints to the general function of our algorithm.…”