MRS Proc. 2000 DOI: 10.1557/proc-624-189 View full text
S.Y. Tan, R.J. Gambino, R. Goswami, S. Sampath, H. Herman

Abstract: ABSTRACTPolycrystalline silicon deposits were formed on a monocrystalline silicon substrate by thermal spraying. The resulting structure exhibits a device characteristic. Pressure-induced transformations of silicon, namely, Si-III (BC-8) and Si-IX are identified by X-ray diffraction in a Si-I matrix on deposits formed by vacuum plasma spray. The presence of the Si-III and Si-IX indicates that the pressure-quenched silicon deposit is highly conductive, as determined by four-point van der Pauw resistivity measur…

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