Electrical Characteristics of Oxidized∕Nitrided Zr Thin Film on Si

Abstract

In this work, electrical properties of simultaneously oxidized and nitrided sputtered Zr thin film on n-type Si via N 2 O gas were systematically investigated and charge conduction mechanisms through the oxide were quantitatively analyzed. Effects of simultaneous oxidation and nitridation duration on the metal-oxide-semiconductor characteristics were reported. It was revealed that 15-min oxidized/nitrided sample showed the highest effective dielectric constant, breakdown field, and reliability. This was attributed to the thinnest interfacial layer, lowest total interface trap, effective oxide charge, and highest barrier height between conduction band edge of the oxide and semiconductor. Depending on the applied electric field and oxidation/nitridation duration, charges were conducted through the oxide via space-charge-limited conduction, Schottky emission, Poole-Frenkel emission, and Fowler-Nordheim tunneling mechanisms.

Metal-Oxide-Semiconductor Characteristics of Zr-Oxynitride Thin Film on 4H-SiC Substrate

“…As reported by Li et al, 35 the dielectric constant of ZrO 2 on Si substrate lies in between 7.5-55.0. Based on our previous report, 24 the dielectric constant of ZrO 2 on Si substrate is in the range of 10.58-21.82. It is strongly dependent on the oxide-substrate interface characteristics, nature of the substrate, electrode material, and oxide deposition method.…”

“…7 Of numerous high-κ gate oxides, ZrO 2 has attracted much attention owing to its fascinating properties such as high κ value (22)(23)(24)(25), large energy bandgap (5.8-7.8 eV), and easily stabilized in the form of cubic or tetragonal polymorphs, which may further enhance its effective κ value. 1,2,[23][24][25] Generally, the interfaces of high-κ gate oxide/semiconductor are often contemplated as non-ideal due to the presence of interface defects. These defects may be originated from surface-structural defects, oxidation-induced defects, or radiation-induced defects.…”

“…As a result, good electrical properties of a MOS device can be attained. In our previous works, [23][24][25] bulk ZrO 2 and IL of Zr-silicate oxynitride (ZrSiON) have been formed on Si substrate via simultaneous thermal oxidation and nitridation of sputtered Zr on Si using N 2 O gas. The nitridation effect in the process has provided improved electrical properties to the MOS device.…”

Properties of thermally oxidized and nitrided Zr-oxynitride thin film on 4H–SiC in diluted N2O ambient

“…The lowest total interface-trap density obtained in this experiment is w3.6 Â 10 12 cm À2 , which is obtained from the film oxidized/ nitrided in 10% N 2 O. (10) In higher N 2 O concentrations, i.e. 70 and 100%, all characterized MOS capacitors has revealed a one-step oxide breakdown (E HDB ) as being shown in the JeE plot, while a two-step oxide breakdown (E B and E HDB ) is being recorded for all characterized MOS capacitors oxidized/nitrided in further diluted N 2 O (10 and 30%).…”

“…As reported by Li et al [13], the dielectric constant of ZrO 2 on Si substrate ranges in between 7.5 and 55.0. Based on our previous report [10], the dielectric constant of ZrO 2 on Si substrate lies in the range of 10.58e21.82. Therefore, the value is very much dependent on the oxideesubstrate interface characteristics, nature of the substrate, electrode material, and oxide deposition method.…”