Electrical and luminescent properties of CuGaSe2 crystals and thin films

Rusu, M.; Gashin, P.; Симашкевич, А. В.

doi:10.1016/s0927-0248(01)00023-x

Cited by 25 publications

(7 citation statements)

References 11 publications

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“…In this area, as the temperature increases, the conductivity increases quite rapidly because of the sharp increase in the total electric current density (electrons plus holes) [22], [29]. The energy gap width

normalΔ E_{g}

for

C u G a S e_{2}

was found to be 1.72 eV for

σ^{⊥}

and 1.71 eV for

σ^{false/ false/}

; these outcomes are in good agreement with old data [24], [9]. For instance, the electrical conductivity at 27 ∘ C is equal

3.30 \times 10^{- 3}

(Ω

{c m false)}^{- 1}

for

σ^{⊥}

and

1.33 \times 10^{- 3}

(Ω

{c m false)}^{- 1}

for

σ^{false/ false/}

.…”

Section: Resultssupporting

confidence: 85%

“…This family of materials has got a lot of concern because they show promise for interesting practical applications [2] in photo-voltaic solar cells [3], [4], light-emitting diodes [5], and various non-linear devices [6]. Further, a considerable amount of theoretical and experimental works were done to achieve a good understanding of the optical, electronic, and electrical properties of these compounds [7], [8], [9], [10], [11], [12], [13], [14], [15], [16], [17], [18], [19]. However, the transport investigations of anisotropic properties of these compounds are scarce [20], [21].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Growth and anisotropy of transport properties of CuGaSe2 single crystals

Mobarak

Ashari

Nassary

et al. 2018

Heliyon

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Single crystals of CuGaSe2 are prepared by a technique based on the vertical Bridgman procedure. The crystal chemical and phase compositions were identified by using dispersive X-ray fluorescence spectrometry and X-ray diffraction data analysis, respectively. The Hall effect and the electrical conductivity were determined in terms of temperature, parallel and orthogonal to the layer surface, and the parameters proved to be strongly anisotropic. From carried out measurements, different parameters such like the carrier mobilities, the carrier concentration, the relaxation time, the diffusion coefficient, and the length of diffusion for both, majority carriers and minority carriers were estimated.

show abstract

normalΔ E_{g}

for

C u G a S e_{2}

was found to be 1.72 eV for

σ^{⊥}

and 1.71 eV for

σ^{false/ false/}

; these outcomes are in good agreement with old data [24], [9]. For instance, the electrical conductivity at 27 ∘ C is equal

3.30 \times 10^{- 3}

(Ω

{c m false)}^{- 1}

for

σ^{⊥}

and

1.33 \times 10^{- 3}

(Ω

{c m false)}^{- 1}

for

σ^{false/ false/}

.…”

Section: Resultssupporting

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Growth and anisotropy of transport properties of CuGaSe2 single crystals

Mobarak

Ashari

Nassary

et al. 2018

Heliyon

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show abstract

“…Only one study on flashevaporated CuGaSe 2 thin films also investigated temperature-dependent Hall measurements, but there the focus was on comparison with single crystals, not on defect depths and concentration. 24 High concentrations of free carriers have been possible particularly by the use of soda-lime glass among other substrates. It is well known that Na from the glass substrate diffuses into the film at high temperatures during the growth process, thereby increasing the free carrier concentration p. [25][26][27] All of these investigations have been performed on CuInSe 2 , a chalcopyrite closely related to CuGaSe 2 , and its alloy Cu(In,Ga)Se 2 with low Ga content, but the mechanism is believed to be valid for the pure CuGaSe 2 as well.…”

Section: A Self-compensationmentioning

confidence: 99%

Self-compensation of intrinsic defects in the ternary semiconductorCuGaSe2

et al. 2004

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Temperature-dependent Hall measurements have been performed on thin films of the ternary chalcopyrite CuGaSe 2 . Unintentionally doped samples and Na-containing samples are compared, as well as epitaxial and polycrystalline ones. Acceptor activation energies and acceptor and donor densities are extracted. Activation energies as well as defect densities vary over a wide range. We demonstrate that all samples are dominated by the same defect with an activation energy of 150 meV in the infinite-dilution limit. It is shown that the degree of compensation increases with increasing acceptor density. Thus direct evidence of self-compensation by intrinsic defects is given. CuGaSe 2 containing Na shows the same defects as CuGaSe 2 without Na: thus, it can be excluded that the dominant effect of Na is the introduction of a new acceptor. In addition, reduced compensation due to Na is not found; the net doping increases in spite of an increased compensation.

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“…This is followed by either of two or both transitions around 1.66-1.69 and 1.62-1.63 ev, which are interpreted as FB or DA transitions (see e.g., [80, 82-87, 90, 91, 97, 99-105]), although some authors report more individual transitions in this energy region. A deeper defect-related transition around 1.56-1.60 ev has been reported as well (see e.g., [81,[83][84][85]91,100,101,[103][104][105]), together with a number of deeper transitions, which have been attributed to deeper defects [100,106] or to potential fluctuations [103]. These general patterns are similar to those obtained in CuInSe 2 -a fact that has been ignored in the literature until recently [77,107].…”

Section: Much Less Luminescence and Hall Investigations Have Been Donmentioning

confidence: 78%