Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction

Kanai, Shun; Yamanouchi, Michihiko; Ikeda, Shoji; Nakatani, Yoshinobu; Matsukura, F.; Ohno, Hideo

doi:10.1063/1.4753816

Cited by 363 publications

(297 citation statements)

References 22 publications

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“…To achieve voltage-induced dynamic magnetization switching of the perpendicularly magnetized free layer, [11][12][13][14] we need to cancel the effective PMA during the switching process; therefore, the sign of the VCMA effect that induces the reduction in PMA is technologically important. In our previous study, we observed a large VCMA coefficient of 290 fJ Vm − 1 in the Cr/Fe/MgO MTJ, as shown by the open circles in Figure 5c.…”

Section: Highly Efficient Voltage Control T Nozaki Et Almentioning

confidence: 99%

“…5,6 The achievement of the VCMA effect in MgO-based MTJs 7 and the demonstration of high-speed responses, such as voltage-induced ferromagnetic resonance (FMR) excitation, 8,9 spin-wave excitation 10 and dynamic magnetization switching, [11][12][13][14] have brought great changes to research in this field. Modulations of the Curie temperature, 15 domain wall propagation, 16,17 interfacial Dzyaloshinskii-Moriya interaction 18 and proximity-induced magnetism 19 have also been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

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Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions

et al. 2017

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Voltage control of spin enables both a zero standby power and ultralow active power consumption in spintronic devices, such as magnetoresistive random-access memory devices. A practical approach to achieve voltage control is the electrical modulation of the spin-orbit interaction at the interface between 3d-transition-ferromagnetic-metal and dielectric layers in a magnetic tunnel junction (MTJ). However, we need to initiate a new guideline for materials design to improve both the voltage-controlled magnetic anisotropy (VCMA) and perpendicular magnetic anisotropy (PMA). Here we report that atomic-scale doping of iridium in an ultrathin Fe layer is highly effective to improving these properties in Fe/MgO-based MTJs. A large interfacial PMA energy, K i,0 , of up to 3.7 mJ m − 2 was obtained, which was 1.8 times greater than that of the pure Fe/MgO interface. Moreover, iridium doping yielded a huge VCMA coefficient (up to 320 fJ Vm − 1 ) as well as high-speed response. First-principles calculations revealed that Ir atoms dispersed within the Fe layer play a considerable role in enhancing K i,0 and the VCMA coefficient. These results demonstrate the efficacy of heavy-metal doping in ferromagnetic layers as an advanced approach to develop high-density voltage-driven spintronic devices. NPG Asia Materials (2017) 9, e451; doi:10.1038/am.2017.204; published online 5 December 2017 INTRODUCTIONSpintronic devices, such as a magnetoresistive random-access memory device using a MgO-based magnetic tunnel junction (MTJ), 1,2 are expected to reduce the standby power of future computing systems by utilizing the non-volatile feature of magnetism. However, one significant challenge emerges from reducing the energy for information writing: magnetization switching. This issue is caused by electriccurrent-based operations of spintronic devices using electric-currentinduced magnetic fields, spin-transfer torque (STT) and spin-orbit torque based on the spin Hall effect rather than the electric-field-based operations presently used for semiconductor devices. For example, recent developments of STT-magnetoresistive random access memory have achieved~100 fJ per bit writing energies, 3 which corresponds to 10 7 k B T, where k B is the Boltzmann constant and T is the temperature (assumed to be 300 K here). In contrast, the energy required for maintaining magnetic information, that is, thermal stability, is between 60 k B T and 100 k B T. This large energy gap between data writing and retention, on the order of 10 5 , mainly originates

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Section: Highly Efficient Voltage Control T Nozaki Et Almentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions

et al. 2017

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“…Attempts to attain this goal have mostly focused on charge accumulation or band shifting in ultrathin ferromagnetic layers with a metal oxide gate dielectric. [15][16][17][18][19][20] In these systems, stable reversal of perpendicular magnetization can be realized when precessional motion of magnetization is triggered by short voltage pulses. 19,20 Giant modulations of PMA have also been obtained by voltage control of oxygen ion migration in metal/metal oxide bilayers.…”

Section: Introductionmentioning

confidence: 99%

“…Various studies have been published on electric-field-controlled magnetic effects in recent years, including magnetic domain wall propagation, 1-8 magnetic phase transitions, [9][10][11][12] spin polarization, 13,14 magnetic anisotropy [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32] and exchange bias. [33][34][35][36][37] Electric-field control of perpendicular magnetic anisotropy (PMA) would open up new prospects for the realization of high-density magnetic memory and logic technologies operating at low energy consumption levels.…”

Section: Introductionmentioning

confidence: 99%

Electric-field switching of perpendicularly magnetized multilayers

et al. 2015

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Perpendicularly magnetized layers are used widely for high-density information storage in magnetic hard disk drives and nonvolatile magnetic random access memories. Writing and erasing of information in these devices is implemented by magnetization switching in local magnetic fields or via intense pulses of electric current. Improvements in energy efficiency could be obtained when the reorientation of perpendicular magnetization is controlled by an electric field. Here, we report on reversible electric-field-driven out-of-plane to in-plane magnetization switching in Cu/Ni multilayers on ferroelectric BaTiO 3 at room temperature. Fully deterministic magnetic switching in this hybrid material system is based on efficient strain transfer from ferroelastic domains in BaTiO 3 and the high sensitivity of perpendicular magnetic anisotropy in Cu/Ni to electric-field-induced strain modulations. We also demonstrate that the magnetoelectric coupling effect can be used to realize 180°magnetization reversal if the out-of-plane symmetry of magnetic anisotropy is temporarily broken by a small magnetic field.

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“…Recently, electrical switching of magnetization direction was realized for a free layer of magnetic tunnel junctions (MTJs) through the change of magnetic anisotropy by applying nanosecond electricfield pulses [5,6]. Most studied MTJs are based on ferromagnetic (FM) metal electrodes and are assembled as ferromagnet/insulator/ferromagnet.…”

Section: Introductionmentioning

confidence: 99%

(Ga,Mn)As-Based Magnetic Tunnel Junctions under Electric Field from First Principles

Luo

Shen

2016

Acta Phys. Pol. A

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Diluted magnetic semiconductors composed in magnetic tunnel junctions have potential applications in spintronics but the development has not been fast. The main difficulty is how to control the magnetism of diluted magnetic semiconductors. For our model semiconductor magnetic tunnel junctions, (Ga,Mn)As/GaAs/(Ga,Mn)As, we found that the magnetic coupling between the transition metal ions in each diluted magnetic semiconductor electrode of such semiconductor magnetic tunnel junctions can be switched from ferromagnetic to antiferromagnetic by the external electric field. The phenomenon suggest a possible avenue for the application of semiconductor magnetic tunnel junctions.

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Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction

Cited by 363 publications

References 22 publications

Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions

Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions

Electric-field switching of perpendicularly magnetized multilayers

(Ga,Mn)As-Based Magnetic Tunnel Junctions under Electric Field from First Principles

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