Spintronics for Next Generation Innovative Devices 2015
DOI: 10.1002/9781118751886.ch11
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Electric‐Field Control of Magnetism in Ferromagnetic Semiconductors

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“…that opened up alternative progression for acknowledgment of spintronics devices [17][18][19][20][21][22]. Among these TM ions, Co is the utmost remarkable doping element as it may yield deep levels in the gap region to offer a sustainable means of tuning optical, electrical and magnetic properties to retain both reasonable conductivity and roomtemperature ferromagnetism (RTFM) [23].…”
Section: Introductionmentioning
confidence: 99%
“…that opened up alternative progression for acknowledgment of spintronics devices [17][18][19][20][21][22]. Among these TM ions, Co is the utmost remarkable doping element as it may yield deep levels in the gap region to offer a sustainable means of tuning optical, electrical and magnetic properties to retain both reasonable conductivity and roomtemperature ferromagnetism (RTFM) [23].…”
Section: Introductionmentioning
confidence: 99%