Electric and Magnetic Properties of Atomic Layer Deposited ZrO₂-HfO₂Thin Films

Abstract

Atomic layer deposition method was employed to deposit thin films consisting of ZrO 2 and HfO 2. Zirconia films were doped with hafnia and vice versa, and also nanolaminates were formed. All depositions were carried out at 300 • C. Most films were crystalline in their as-deposited state. Zirconia exhibited the metastable cubic and tetragonal phases by a large majority, whereas hafnia was mostly in its stable monoclinic phase. Magnetic and electrical properties of the films were assessed. Un-doped zirconia was ferromagnetic and this property diminished with increasing the amount of hafnia in a film. All films exhibited ferroelectric-like behavior and the polarization curves also changed with respect to the film composition.

Mechanical and Magnetic Properties of Double Layered Nanostructures of Tin and Zirconium Oxides Grown by Atomic Layer Deposition

“…The saturation magnetization M s , recorded at 1 kOe against temperature ( Figure 7 b), followed a linear trend, decreasing moderately with increasing temperature. Single ZrO 2 film on Si substrate exhibited magnetization lower than 2 × 10 −6 emu and insignificant coercivity, which is also consistent with the results of our earlier studies [ 32 ]. However, single ZrO 2 films, grown to higher thicknesses, otherwise can exhibit considerable hysteretic magnetization, nonlinear in external fields, as has been observed in several works earlier [ 33 , 34 , 35 ], probably due to the stabilization and presence of metastable phases, rich of oxygen vacancies.…”

Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone

“…10 -6 emu. Similar magnetic moment values in ZrO2 films and its laminated structures with other metal oxides have been obtained by various authors [39,[60][61]. The most prominent feature from our temperature dependent zero field cooled (ZFC) and field cooled (FC) magnetization measurements is the bifurcation (irreversibility) of ZFC-FC loops and a large increase in magnetization below 46 K (Fig.…”

“…Notably, figure 7 shows room temperature ferromagnetic-like behavior, most markedly apparent in the thinnest nanolaminate, with a saturation value of 1.5.10 −6 emu. Similar magnetic moment values in ZrO 2 films and its laminated structures with other metal oxides have been obtained by various authors [39,60,61]. Low temperature magnetic isotherm or hysteresis loops measured at 5 K only confirmed the existence of Mn 3 O 4 in all of the samples.…”

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

“…425 The role of high-k materials has also continued to expand in more traditional logic and memory device applications. As one example, the recent discovery of ferroelectric 47,48 and ferromagnatic 426 properties in HfO 2 and related high-k dielectrics has created substantial interest in memory applications 46,49,427,428 and negative (differential) capacitance transistor devices as a means for further extending CMOS device scaling. 44,45,429 High-k materials are also finding use in metal/insulator/metal (MIM) back-end-of-line (BEOL) structures such as decoupling capacitors 430 and resistive random-access memory devices, 41 and in metal/insulator/semiconductor (MIS) configurations as Fermi-level de-pinning layers.…”