2012
DOI: 10.1002/adfm.201200186
|Get access via publisher |Summarize |Cite
|
Sign up to set email alerts

Efficient Synthesis of Heteroatom (N or S)‐Doped Graphene Based on Ultrathin Graphene Oxide‐Porous Silica Sheets for Oxygen Reduction Reactions

Abstract: Heteroatom (N or S)-doped graphene with high surface area is successfully synthesized via thermal reaction between graphene oxide and guest gases (NH 3 or H 2 S) on the basis of ultrathin graphene oxide-porous silica sheets at high temperatures. It is found that both N and S-doping can occur at annealing temperatures from 500 to 1000 ° C to form the different binding confi gurations at the edges or on the planes of the graphene, such as pyridinic-N, pyrrolic-N, and graphitic-N for N-doped graphene, thiopheneli… Show more

Search citation statements

Order By: Relevance

Paper Sections

Select...
992
203
180
7

Citation Types

45
870
3
2

Year Published

2012
2012
2026
2026

Publication Types

Select...
1,237
25
17
10

Relationship

14
1,275

Authors

Journals

citations

Cited by 1,286 publications

(920 citation statements)
references

References 38 publications

45
870
3
2
Order By: Relevance
How this paper cites the one you are viewing
“…These peaks can be attributed to sulfur bonded directly to the carbon atoms in a heterocyclic configuration as no elemental sulfur was observed by XRD or TEM, and (if present) would have been removed by the rigorous washing procedure employed after SG synthesis. We also speculate that these C‐S‐C species exist in the thiophene form, a notion consistent with previously reported investigations and supported by our formation energy calculations discussed later on. Furthermore, thiophene species exist in a pentagonal arrangement, thereby residing on the edge plane and defect sites of SG and most likely giving rise to the strong emergence of the D‐band observed through Raman spectroscopy.…”
Section: Results
supporting
confidence: 93%