Efficient silicon quantum dots light emitting diodes with an inverted device structure

Yao, Li; Yu, Ting; Ba, Lixiang; Hu, Meng; Fang, Xin; Wang, Yilun; Li, Lei; Rong, Xin; Wang, Suo; Wang, Xinqiang; Ran, Guangzhao; Pi, Xiaodong; Qin, G. G.

doi:10.1039/c5tc03064a

Cited by 67 publications

(68 citation statements)

References 42 publications

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“…Semiconductor nanocrystals (NCs) have shown great potential in the applications of various fields such as electronics, optoelectronics, photovoltaics, bioimaging, and energy . Given the fact that the success of all kinds of bulk semiconductors largely depends on their doping, doping for semiconductor NCs has been regarded as being critical to the development of semiconductor‐NC‐based structures and devices.…”

Section: Introductionmentioning

confidence: 99%

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Gao

Wang

et al. 2016

Part & Part Syst Charact

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The doping of semiconductor nanocrystals (NCs) is crucial for the optimization of the performance of devices based on them. In contrast to recent progress on the doping of compound semiconductor NCs and silicon NCs, the doping of germanium (Ge) NCs has lagged behind. Here it is shown that Ge NCs can be doped with phosphorus (P) during synthesis by a nonthermal plasma. It is found that there are more P atoms in the NC near‐surface region than in the NC core. P doping modifies the surface state of Ge NCs. Compressive strain can be incuced in Ge NCs by P which can explain the P‐doping‐enhanced oxidation resistance of Ge NCs. Stable dispersions of P‐doped Ge NCs in acetonitrile can be cast to produce films for field‐effect transistors (FETs). FET analysis shows that the electrical conductivity and electron mobility of a Ge‐NC film increase with the increase of the P doping level, although the electrical activation efficiency of P in the Ge‐NC film is low. Finally, atomic layer deposition of aluminum oxide at the surface of P‐doped Ge NCs is shown to improve the performance of the FETs.

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Section: Introductionmentioning

confidence: 99%

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Gao

Wang

et al. 2016

Part & Part Syst Charact

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“…Silicon nanocrystals (Si NCs) have been intensively investigated during past decades for their promising applications in various fields such as optoelectronics [1][2][3][4][5][6], photovoltaics [7][8][9][10][11], energy storage [12,13], and bioimaging [14,15]. This is mainly due to their nontoxicity, low cost, and compatibility with well-established Si-based microelectronic technology.…”

Section: Introductionmentioning

confidence: 99%

Density functional theory study on the B doping and B/P codoping of Si nanocrystals embedded in SiO2

Cottenier

et al. 2017

Phys. Rev. B

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Doping silicon nanocrystals (Si NCs) embedded in silicon dioxide (SiO 2 ) with boron (B) and phosphorus (P) is a promising way of tuning the properties of Si NCs. Here we take advantage of density functional theory to investigate the dependence of the structural and electronic properties of Si NCs embedded in SiO 2 on the doping of B and P. The locations and energy-level schemes are examined for singularly B-doped or B/P-codoped Si NCs embedded in SiO 2 with a perfect or defective Si/SiO 2 interface at which a Si dangling bond exists. A dangling bond plays an important role in the doping of Si NCs with B or B/P. The doping behavior of B in Si NCs embedded in SiO 2 vastly differs from that of P. The electronic structure of a B/P-codoped Si NC largely depends on the distribution of the dopants in the NC.

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“…The best values of EQE for SiLED are 8.6% for near-infrared emission (Cheng et al, 2011), while for white, red, and orange emissions, values of EQE are less than 0.1% (Maier-Flaig et al, 2013b;Yamada and Shirahata, 2019). There are several ways of improving LED characteristics, including using a device with an inverted structure of instead of a direct one (Yao et al, 2016;Ghosh et al, 2018b;Yamada and Shirahata, 2019), the control of the thickness of the SiQDs and polyTPD layers (Ghosh et al, 2014), the control of the size-dependence of SiQDs (Maier-Flaig et al, 2013a), and using aromatic ligands on SiQD surfaces instead of aliphatic ones (Liu et al, 2018a).…”

Section: Application Of Siqds In Led Devicesmentioning

confidence: 99%

Silicon Quantum Dots: Synthesis, Encapsulation, and Application in Light-Emitting Diodes

et al. 2020

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Silicon quantum dots (SiQDs) are semiconductor Si nanoparticles ranging from 1 to 10 nm that hold great applicative potential as optoelectronic devices and fluorescent bio-marking agents due to their ability to fluoresce blue and red light. Their biocompatibility compared to conventional toxic Group II-VI and III-V metal-based quantum dots makes their practical utilization even more attractive to prevent environmental pollution and harm to living organisms. This work focuses on their possible use for light-emitting diode (LED) manufacturing. Summarizing the main achievements over the past few years concerning different Si quantum dot synthetic methods, LED formation and characteristics, and strategies for their stabilization by microencapsulation and modification of their surface by specific ligands, this work aims to provide guidance en route to the development of the first stable Si-based light-emitting diodes.

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Efficient silicon quantum dots light emitting diodes with an inverted device structure

Abstract: SiQDs with an average diameter of 2.6 ± 0.5 nm are used as the light emitting material in high-efficiency inverted structure light emitting diodes.

Cited by 67 publications

References 42 publications

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Density functional theory study on the B doping and B/P codoping of Si nanocrystals embedded in SiO2

Silicon Quantum Dots: Synthesis, Encapsulation, and Application in Light-Emitting Diodes

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