Efficient CdTe Nanocrystal/TiO2 Hetero-Junction Solar Cells with Open Circuit Voltage Breaking 0.8 V by Incorporating A Thin Layer of CdS Nanocrystal

Mei, Xianglin; Wu, Bin; Guo, Xin; Liu, Xiaolin; Rong, Zhitao; Liu, Songwei; Chen, Yanru; Qin, Donghuan; Xu, Wei; Hou, Lintao; Chen, Bingchang

doi:10.3390/nano8080614

Cited by 7 publications

(5 citation statements)

References 35 publications

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“…In these structures, the quantum confinement effects control the properties of the materials with a dramatic change in their properties by varying the size of the nanocrystallite [1,2]. This behavior awards the semiconductor nanostructures and corroborates different applications such as photovoltaics [3,4,5], photocatalysis [6,7,8], lasers [9], transistors [10], biological labels [11], and light emitting devices [12,13]. The tunable physical and optical properties of semiconductor nanostructures can be achieved by two ways: the first by changing the size and dimension of the nanocrystals in the range below the exciton Bohr diameter; and the second is the variation of the optical and physical properties of the nanocrystallite by regulating the constituent stoichiometries of the alloy compounds.…”

Section: Introductionmentioning

confidence: 92%

Facile Synthesis of Ternary Alloy of CdSe1-xSx Quantum Dots with Tunable Absorption and Emission of Visible Light

et al. 2018

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The synthesis of alloyed semiconductor quantum dots has produced structures that have distinct properties in comparison with both their bulk counterparts and their parent binary semiconductor quantum dots. In this work, the quantum confined structures of a ternary alloy of CdSe1−xSx were synthesized by one-pot synthesis method in an aqueous medium at a low temperature and capped with 3-mercaptopropoionic acid. Structures of the synthesized quantum dots were investigated by energy dispersive X-ray, X-ray diffraction, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy. The obtained quantum dots had modified cubic structures as proven by X-ray diffraction and selected area electron diffraction. The optical properties of the synthesized quantum dots were characterized by optical absorption, photoluminescence, and color analysis. Optical absorption investigation revealed a widening of the band gap of CdSe1−xSx with increasing S content. This widening increased for the samples suspended in water relative to the samples measured in powder form due to the difference in the environment of the two cases. The size determined from the optical absorption measurements was found to be compatible with the sizes obtained from the X-ray diffraction with the value of bowing parameter around 1, which indicated a graded diffusion of sulfur. It was also ascertained that the emission of different compositions covered the most visible range with a small full width at half maximum. The x and y values of the chromaticity coordinates decreased with increasing sulfur content of up to 15%, while the z value increased.

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Section: Introductionmentioning

confidence: 92%

Facile Synthesis of Ternary Alloy of CdSe1-xSx Quantum Dots with Tunable Absorption and Emission of Visible Light

et al. 2018

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“…The band gap of the material is also correlated with the thickness of the p-CdTe layer, which decreases with increasing thickness. The band gap of the p-CdTe material plays a vital role in enhancing the photovoltaic properties, absorption ability, and lifetime of carriers [29], [30], [31]. The impact of band gap alteration on the PCE of modulated heterojunctions was investigated in this work.…”

Section: Effect Of Band Gap Variation Of Absorber Layer (P-cdte) Sola...mentioning

confidence: 99%

Simulation of p-CdTe and n-TiO2 Heterojunction Solar Cell Efficiency

Chougale¹,

Shelke²,

Prasad³

et al. 2023

JCMM

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This study presents a numerical analysis of p-type CdTe and n-type TiO2 heterojunction solar cells. The simulations were conducted using SCAPS-1D software to investigate the effects of varying the thickness of the p-type CdTe layer, the temperature, and the band gap on the efficiency of the solar cell. The results show that the efficiency of the solar cell increases from 16.81% to 18.28% as the thickness of the p-type CdTe layer is varied from 1.0 to 5.0 µm and decreases from 17.95% to 11.67% as the temperature is varied from 300 K to 400 K. The efficiency also increases from 15.29% to 19.26% as the band gap is varied from 1.40 eV to 1.55 eV. For the p-CdTe/n-TiO2 heterojunction solar cell, the optimized absorber layer thickness is 3 µm, and the optimized temperature and band gap are 300 K and 1.5 eV, respectively. At these optimized parameters, the highest efficiency (ⴄ) % achieved was 17.95%, with a VOC of 0.766 V, JSC of 27.75 mA/cm2, and FF of 84.39%. These results provide theoretical guidelines for fabricating efficient p-CdTe/n-TiO2 heterojunction solar cells.

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“…Their devices showed enhanced electron mobility and a tunable Fermi level, which resulted in relatively low series resistance and improved PCE. In our previous work [ 36 ], we found that the performance of CdTe nanocrystal (NC) solar cells with an inverted structure of FTO/TiO 2 /CdTe/Au can be largely improved by inserting a thin layer of solution-processed CdS NC film between the CdTe NC and TiO 2 due to the optimized band alignment and p-n junction quality. The light absorption of the ETLs, however, might also negatively influence the device performance.…”

Section: Introductionmentioning

confidence: 99%

Efficient PbS Quantum Dot Solar Cells with Both Mg-Doped ZnO Window Layer and ZnO Nanocrystal Interface Passivation Layer

Ren

Pan

et al. 2021

Nanomaterials

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In this paper, a Mg-doped ZnO (MZO) thin film is prepared by a simple solution process under ambient conditions and is used as the window layer for PbS solar cells due to a wide n-type bandgap. Moreover, a thin layer of ZnO nanocrystals (NCs) was deposited on the MZO to reduce carrier recombination at the interface for inverted PbS quantum dot solar cells with the configuration Indium Tin Oxides (ITO)/MZO/ZnO NC (w/o)/PbS/Au. The effect of film thickness and annealing temperature of MZO and ZnO NC on the performance of PbS quantum dot solar cells was investigated in detail. It was found that without the ZnO NC thin layer, the highest power conversion efficiency(PCE) of 5.52% was obtained in the case of a device with an MZO thickness of 50 nm. When a thin layer of ZnO NC was introduced between MZO and PbS quantum dot film, the PCE of the champion device was greatly improved to 7.06% due to the decreased interface recombination. The usage of the MZO buffer layer along with the ZnO NC interface passivation technique is expected to further improve the performance of quantum dot solar cells.

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Efficient CdTe Nanocrystal/TiO2 Hetero-Junction Solar Cells with Open Circuit Voltage Breaking 0.8 V by Incorporating A Thin Layer of CdS Nanocrystal

Cited by 7 publications

References 35 publications

Facile Synthesis of Ternary Alloy of CdSe1-xSx Quantum Dots with Tunable Absorption and Emission of Visible Light

Facile Synthesis of Ternary Alloy of CdSe1-xSx Quantum Dots with Tunable Absorption and Emission of Visible Light

Simulation of p-CdTe and n-TiO2 Heterojunction Solar Cell Efficiency

Efficient PbS Quantum Dot Solar Cells with Both Mg-Doped ZnO Window Layer and ZnO Nanocrystal Interface Passivation Layer

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