2011
DOI: 10.1002/adma.201100038
|View full text |Cite
|
Sign up to set email alerts
|

Efficient, Air‐Stable Bulk Heterojunction Polymer Solar Cells Using MoOx as the Anode Interfacial Layer

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

11
394
0
2

Year Published

2012
2012
2017
2017

Publication Types

Select...
5
5

Relationship

0
10

Authors

Journals

citations
Cited by 608 publications
(415 citation statements)
references
References 28 publications
11
394
0
2
Order By: Relevance
“…These TMOs work as hole-selective contacts due to their large work functions (>5 eV) laying close to the Highest Occupied Molecular Orbital (HOMO) level of several ptype organic semiconductors, favoring ohmic contact formation. Since TMOs are more stable than their organic counterparts [15] and possess the same low-temperature and solution-based processability, it is natural to explore their potential as doping alternatives for c-Si solar cells.…”
Section: Introductionmentioning
confidence: 99%
“…These TMOs work as hole-selective contacts due to their large work functions (>5 eV) laying close to the Highest Occupied Molecular Orbital (HOMO) level of several ptype organic semiconductors, favoring ohmic contact formation. Since TMOs are more stable than their organic counterparts [15] and possess the same low-temperature and solution-based processability, it is natural to explore their potential as doping alternatives for c-Si solar cells.…”
Section: Introductionmentioning
confidence: 99%
“…This material system, particularly in the form of thin and ultra-thin films, finds applications in a variety of technologically relevant fields, including catalysis, 1 gas sensors, 2,3 optically switchable coatings, 4,5 high-energy density solid-state microbatteries, 6,7 smart windows technology, 8,9 flexible supercapacitors, 10 thin film transistors (TFTs) 11 and organic electronics. [12][13][14][15][16][17][18][19][20][21][22] Owing to its high work function -up to 6.9 eV [12] and to the layered structure of α-MoO 3 , MoO x is also employed as a 2D material beyond graphene and as efficient hole contact on 2D transition metal dichalcogenides for p-type field effect transistors (p-FETs). [23][24][25] In view of a reliable device performance, the control over the chemical and physical properties of the MoO x system is mandatory.…”
mentioning
confidence: 99%
“…[7][8][9] Regarding the extraction of holes at the anode, the most commonly used materials are poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) 10 and MoO 3 . 11,12 These additional layers have been clearly proven as useful contact selectivity enhancers.…”
mentioning
confidence: 99%