Efficiency enhancement of WSe2 heterojunction solar cell with CuSCN as a hole transport layer: A numerical simulation approach

Haque, Md. Dulal; Ali, Md. Hasan; Islam, Abu Zafor Md. Touhidul

doi:10.1016/j.solener.2021.10.054

Cited by 34 publications

(15 citation statements)

References 44 publications

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“…These simulation results also represent that a MoS 2 solar cell with BSF has better thermal consistency than a structure without BSF . At high temperatures, more electron–hole pairs are generated for a given irradiance that maintains a constant value of J SC .…”

Section: Resultsmentioning

confidence: 53%

“…At higher SRV, the EQE of the solar cell structure without In 2 Te 3 reduces compared with the solar cell with In 2 Te 3 at longer wavelength at higher SRV. As the rate of SRV rises, the electron and hole begin to recombine at the rear contact surface due to the absence of In 2 Te 3 degrading the solar cell performance parameters …”

Section: Resultsmentioning

confidence: 99%

“…The sources of these input data are listed in Table . The parameters for ITO, TiO 2 , MoS 2 , and In 2 Te 3 were collected from earlier theoretical simulations and experimental published articles. ,,− The thermal velocity of electrons and holes in each layer has been estimated to be 10 7 cm/s for the sake of simplicity in the numerical analysis. Nickel (Ni) and aluminum (Al) have been used as rear and front electrodes.…”

Section: Device Construction and Simulation Methodologymentioning

confidence: 99%

“…As the rate of SRV rises, the electron and hole begin to recombine at the rear contact surface due to the absence of In 2 Te 3 degrading the solar cell performance parameters. 37 3.8. Effect of Capacitance−Voltage (C−V) on Solar Cell.…”

Section: Influence Of Thickness Variation Carrier Concentration and D...mentioning

confidence: 99%

“…The insertion of the In 2 Te 3 BSF layer in the proposed SC structure decreases the PGC recombination by creating strong back surface electric fields at the In 2 Te 3 /MoS 2 interface and enhances the absorption edge at the higher wavelength range, which contribute to maximize the overall performance parameters of the SC. 37 Table 5 compares the evolution of MoS 2 -based solar cell configurations investigated by various research groups. The PCE increases from 19.62 to 21.39% according to the earlier reported experimental and numerical simulations.…”

Section: Influence Of Thickness Variation Carrier Concentration and D...mentioning

confidence: 99%

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Performance Enhancement of an MoS₂-Based Heterojunction Solar Cell with an In₂Te₃ Back Surface Field: A Numerical Simulation Approach

et al. 2023

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Researchers are currently showing interest in molybdenum disulfide (MoS2)-based solar cells due to their remarkable semiconducting characteristics. The incompatibility of the band structures at the BSF/absorber and absorber/buffer interfaces, as well as carrier recombination at the rear and front metal contacts, prevents the expected result from being achieved. The main purpose of this work is to enhance the performance of the newly proposed Al/ITO/TiO2/MoS2/In2Te3/Ni solar cell and investigate the impacts of the In2Te3 BSF and TiO2 buffer layer on the performance parameters of open-circuit voltage (V OC), short-circuit current density (J SC), fill factor (FF), and power conversion efficiency (PCE). This research has been performed by utilizing SCAPS simulation software. The performance parameters such as variation of thickness, carrier concentration, the bulk defect concentration of each layer, interface defect, operating temperature, capacitance–voltage (C–V), surface recombination velocity, and front as well as rear electrodes have been analyzed to achieve a better performance. This device performs exceptionally well at lower carrier concentrations (1 × 1016 cm–3) in a thin (800 nm) MoS2 absorber layer. The PCE, V OC, J SC, and FF values of the Al/ITO/TiO2/MoS2/Ni reference cell have been estimated to be 22.30%, 0.793 V, 30.89 mA/cm2, and 80.62% respectively, while the PCE, V OC, J SC, and FF values have been determined to be 33.32%, 1.084 V, 37.22 mA/cm2, and 82.58% for the Al/ITO/TiO2/MoS2/In2Te3/Ni proposed solar cell by introducing In2Te3 between the absorber (MoS2) and the rear electrode (Ni). The proposed research may give an insight and a feasible way to realize a cost-effective MoS2-based thin-film solar cell.

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Section: Resultsmentioning

confidence: 53%

Section: Resultsmentioning

confidence: 99%

Section: Device Construction and Simulation Methodologymentioning

confidence: 99%

Section: Influence Of Thickness Variation Carrier Concentration and D...mentioning

confidence: 99%

Section: Influence Of Thickness Variation Carrier Concentration and D...mentioning

confidence: 99%

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Performance Enhancement of an MoS₂-Based Heterojunction Solar Cell with an In₂Te₃ Back Surface Field: A Numerical Simulation Approach

et al. 2023

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Investigating the Performance of FASnI₃‐Based Perovskite Solar Cells with Various Electron and Hole Transport Layers: Machine Learning Approach and SCAPS‐1D Analysis

Khan,

Ahmed

2024

Advcd Theory and Sims

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In this study, tungsten disulfide (WS2) as an electron transport layer (ETL) and zinc phosphide (Zn3P2) as a hole transport layer (HTL) are incorporated to improve the performance of the FASnI3‐based perovskite solar cell (PSC). The solar cell capacitance simulator in one dimension (SCAPS‐1D) is used to investigate the photovoltaic (PV) performances of the heterojunction Al/FTO/WS2/FASnI3/Zn3P2/Ni solar structure. The performance metrics of proposed device with numerous ETLs and HTLs are discussed. The suggested device provides appropriate band structures, which in turn potentially reduce minority electron recombination, thereby enhancing overall performances. Influences of various physical parameters such as thickness, doping concentration, bulk defect, interface defect states, work function, and back surface recombination velocity (BSRV) on the device performances have also been analyzed. An efficiency of 29.81% is achieved at the optimum thicknesses of 0.05 µm for WS2 ETL, 1.0 µm for FASnI3 absorber, and 0.1 µm for Zn3P2 HTL. Furthermore, a machine learning algorithm is used to assess the impact of multiple semiconductor parameters, and found that defect density influences the most. This model, which has an approximate correlation coefficient (R2) of 0.937, can predict the data with precision. Therefore, these numerical outcomes will help researchers further design and manufacture a low‐cost and highly efficient FASnI3‐based PSC.

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Performance evaluation of WS₂ as buffer and Sb₂S₃ as hole transport layer in CZTS solar cell by numerical simulation

Riyad

Sunny

Khatun

et al. 2022

Engineering Reports

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This study reports on performance enhancement of a Cu2ZnSnS4 solar cell introducing Sb2S3 as hole transport layer (HTL) along WS2 as buffer layer. We have investigated photovoltaic (PV) characteristics by utilizing SCAPS‐1D. A comparative analysis on PV performances between conventional CZTS/CdS and proposed Ni/Sb2S3/CZTS/WS2/FTO/Al solar cells is presented. It is revealed that “spike like” band structure at the CZTS/WS2 interface having smaller conduction band offset makes it potential alternative to commonly used CdS buffer. This report also evaluates that the Sb2S3 as an HTL inserted at the rear of CZTS enhances performances by reducing carrier recombination at back interface with appropriate band alignment. The impacts of thickness, carrier concentration of different layers, and bulk defect density in CZTS as well as the interface defects on cell outputs are analyzed. The influences of temperature, work function, and cell resistances are also examined. Optimum absorber thickness of 1.0 μm along doping density of 1017 cm−3 is selected. A maximum efficiency of 30.63% is achieved for the optimized CZTS cell. Therefore, these results suggest that Sb2S3 as HTL and WS2 as buffer layer can be employed effectively to develop highly efficient and low‐cost CZTS solar cells.

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Efficiency enhancement of WSe2 heterojunction solar cell with CuSCN as a hole transport layer: A numerical simulation approach

Cited by 34 publications

References 44 publications

Performance Enhancement of an MoS₂-Based Heterojunction Solar Cell with an In₂Te₃ Back Surface Field: A Numerical Simulation Approach

Performance Enhancement of an MoS₂-Based Heterojunction Solar Cell with an In₂Te₃ Back Surface Field: A Numerical Simulation Approach

Investigating the Performance of FASnI₃‐Based Perovskite Solar Cells with Various Electron and Hole Transport Layers: Machine Learning Approach and SCAPS‐1D Analysis

Performance evaluation of WS₂ as buffer and Sb₂S₃ as hole transport layer in CZTS solar cell by numerical simulation

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Efficiency enhancement of WSe2 heterojunction solar cell with CuSCN as a hole transport layer: A numerical simulation approach

Cited by 34 publications

References 44 publications

Performance Enhancement of an MoS2-Based Heterojunction Solar Cell with an In2Te3 Back Surface Field: A Numerical Simulation Approach

Performance Enhancement of an MoS2-Based Heterojunction Solar Cell with an In2Te3 Back Surface Field: A Numerical Simulation Approach

Investigating the Performance of FASnI3‐Based Perovskite Solar Cells with Various Electron and Hole Transport Layers: Machine Learning Approach and SCAPS‐1D Analysis

Performance evaluation of WS2 as buffer and Sb2S3 as hole transport layer in CZTS solar cell by numerical simulation

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Performance Enhancement of an MoS₂-Based Heterojunction Solar Cell with an In₂Te₃ Back Surface Field: A Numerical Simulation Approach

Performance Enhancement of an MoS₂-Based Heterojunction Solar Cell with an In₂Te₃ Back Surface Field: A Numerical Simulation Approach

Investigating the Performance of FASnI₃‐Based Perovskite Solar Cells with Various Electron and Hole Transport Layers: Machine Learning Approach and SCAPS‐1D Analysis

Performance evaluation of WS₂ as buffer and Sb₂S₃ as hole transport layer in CZTS solar cell by numerical simulation