Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM)

Attarimashalkoubeh, Behnoush; Prakash, Amit; Lee, Sangheon; Song, Jeonghwan; Woo, Jiyong; Misha, Saiful Haque; Tamanna, Nusrat; Hwang, Hyunsang

doi:10.1149/2.0031410ssl

Cited by 29 publications

(31 citation statements)

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“…The phenomenon that is responsible for the decreased the residual active ions in the electrolyte can reduce the voltage disturbance. Damage to the device due to residual active ion was demonstrated and confirmed in previous research [5], [12].…”

Section: Resultssupporting

confidence: 81%

Effect of nitrogen-doped GST buffer layer on switching characteristics of conductive-bridging RAM

Lim

Lee

Woo

et al. 2014

2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)

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We demonstrate the device characteristics of W/Cu/N-GST/AI203/Pt conductive-bridging RAM, focusing on the nitrogen-doped Ge2Sb2 Te 5 buffer layer to realize non volatile memory applications. The on/off ratio of typical Cu/Al20rbased CBRAM was improved from 10 2 to 10 5 with the N-GST buffer layer. The switching uniformity also improved compared to that of a non-buffer layer device. The improved properties that were realized are attributed to the effects of buffer layer such as controlled Cu-ion injection, internal resistor, and Joule heating confinement during the reset process.Furthermore, to verify the effect of nitrogen on the switching properties, we compared the GST and N-GST buffer layers. We believe that doped nitrogen helped to control Cu-ion injection into the resistive switching layer, and to confine the joule heating during the reset process, enabling a high on/off ratio and improved switching uniformity.

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Section: Resultssupporting

confidence: 81%

Effect of nitrogen-doped GST buffer layer on switching characteristics of conductive-bridging RAM

Lim

Lee

Woo

et al. 2014

2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)

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“…However, we are not denying the fact that device‐to‐device conductance may change, and as a result the number of atoms in the break junction can change. A detailed experimental and theoretical analysis of retention behavior in Cu/Ti/HfO 2 ‐ and Cu/Ti/Al 2 O 3 ‐based RRAM devices has previously been reported . Although the device shows good electrical performance, the thicker filament and higher current level is unsuitable for low‐power applications.…”

Section: Resultsmentioning

confidence: 99%

“…Of the 25 measured devices, >15 showed conductance of >65 G o . [51,52] Although the device shows good electrical performance, the thicker filament and higher current level is unsuitable for low-power applications. The device-to-device variation was minimized with conductance values from 10 to 20 G o .…”

Section: Storage Of 6 Bits Per Cell and Sub-atomic Behaviormentioning

confidence: 99%

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions

Banerjee

Hwang

2019

Adv Elect Materials

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electron charge and h is the Planck constant. [6] Electronic switches with atomicsized functional building blocks are the main driving force of modern nanotechnology. The design of atomic dimensional memory devices is limited by the lithographic bottleneck. Nevertheless, the origin of atomic contact in nanoscale architectures is being investigated. [7] The conductive bridge RAM device with quantized conductance (QC) effect proposed by Terebe et al., [8] was based on the fabrication of a gap-type Pt/ nano-gap/Ag 2 S/Ag structure. A small operating voltage of ±600 mV can switch the device between the "OFF" and "ON" states. When a device changes its resistance from high to low, it is usually known as "set"; the reverse change is known as "reset". The QC effect is suitable to realize multiple levels in devices and has been studied in both electrochemical metallization type [9][10][11][12][13][14] and valance change memory type [15,16] gap-less RRAM. In most cases, switching is the after-effect of a stress dependent virginity breakdown, which can consolidate the CF for switching operations. Because the behavior of the CF of conductive bridge RAM is considered to be an example of atomic-switching, further discussion is mainly focused on conductive bridge RAM type devices. Higher initial stress injects more cations into the switching oxide layer that results in poor control over the reset process, resulting in abrupt state transition, and atomic conductance instability. [9][10][11][12][13][14] In another approach, single-atom memory has been proposed for mechanically controllable break junctions (MCBJs), [17] which are a kind of electronic device formed by two knife-edged metal wires placed with a nanometer sized gap, as shown in Figure 1a. MCBJs are well known as atomic or single molecular junction, and have even been investigated to in the context of control of quantum interferences in graphene. [18,19] In an MCBJ, when the two wires are curved, broadening the gap, the contact is broken, and the reverse order experiences an atomic-contact at the break junction. Break junctions are a possible approach to the fabrication of atomic switches. However, in reality, for an electronic device, such design is burdensome due to exorbitant lithographic processes. It is possible to prepare a break junction by electrically controlling the ion migration process in conductive bridge RAM devices, as the switching mechanism is driven by the formation of metallic wire like CF. Although the concept of QC in conductive bridge RAM has been investigated for over a decade, precise and reliable atomic-level control Atomic-level control of conductance in a Cu/Ti/HfO 2 /TiN-based electrically controllable break junction (ECBJ) is demonstrated. The ECBJ is designed through sophisticated stack engineering and refined electrical operation. Control over bias-induced ion migration is the key to forming the ECBJ. Precise atomic-level control is accomplished with an optimized high temperature forming (OHTF) scheme. OHTF-controlled single-atomic switch...

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“…When the voltage was applied with clockwise (CW) direction at first, the Cu/ TaO x /TiN device was not electroformed or SET. However, Cu/TaO x / TiN device did not show large on/off ratio without CC, while conventional CBRAM shows large on/off ratio and requires CC [18]. Fig.…”

Section: Methodsmentioning

confidence: 86%

Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments

Jeon

Park

Jang

et al. 2015

Current Applied Physics

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Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM)

Cited by 29 publications

References 0 publications

Effect of nitrogen-doped GST buffer layer on switching characteristics of conductive-bridging RAM

Effect of nitrogen-doped GST buffer layer on switching characteristics of conductive-bridging RAM

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions

Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments

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