Effects of the Substrate Crystals upon the Structure of Thermal Oxide Layers on Si

Abstract

F himurD rF ensui nd wF meno heprtment of wteril nd vife ieneD qrdute hool of ysk niversityD tpn iffets of the ustrte grystls upon the truture of herml yxide vyers on i hedited to rofF qF forrmnn on the osion of his WHth irthdy gomprisons of frgg refletions from therml oxide thin films on i wfers were mde for five sets of smples with vrious kinds of sustrtesF he intensities of the refletions for the smples with the sustrte of etter qulity were stronger thn those of poor oneD inditing tht the strutures of the rystlline iy P in the oxide lyer were relted with the qulity of the i sustrtesF st is lso shown tht no diffrtion peks were oserved from the oxide lyers grown on i sustrtes y hemil vpor depositionF

Integrated circuit process control monitoring (PCM) data and wafer yield analysed by using synchrotron x-ray topographic measurements

“…The results of this work suggest that wafer surface strain gradient and device functionality do have positive correlation. This relationship may reflect a direct dependence between stronger diffracted x-ray intensity and better crystal quality [28], or the relationship may be indirect, e.g. stronger strain in the silicon and oxide interface, forming trap states being…”

“…Previously, a brief undocumented analysis by the same authors was undertaken wherein ICs were processed on wafers in the same process, and these also revealed no denuded zone after the processing, even though the denuded zone constantly seems to appear in various process simulations [3,4]. The brief analysis also dismissed the initial findings of stronger wafer surface strain gradient being linked to higher yield because of non-quantitative data and the lack of supporting studies [28] at the time.…”