Effects of substrate material on diamond growth from CO-H2 plasma

Saitō, Yukio; Sato, Kouji; Matuda, Shinpei; Koinuma, Hideomi

doi:10.1007/bf01130193

Cited by 10 publications

(2 citation statements)

References 7 publications

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“…Various materials have been used to study diamond deposition-for instance, Si, Ta, Mo, W, SiC, WC, diamond, 25 Cu, Au, 5 SiO 2 , Ni, and graphite. Carbides have in fact been detected on several substrates by x-ray diffraction 27 or TEM analysis, 28 and a 2-3 /xm molybdenum carbide layer has been shown by micro-SIMS in this work. Carbides have in fact been detected on several substrates by x-ray diffraction 27 or TEM analysis, 28 and a 2-3 /xm molybdenum carbide layer has been shown by micro-SIMS in this work.…”

Section: Discussionmentioning

confidence: 57%

“…27 But other parameters like the thermal expansion coefficient 32 and the difference in the cell parameters between diamond and the substrate 33 have been demonstrated to influence the film adherence and the nucleation density. 27 But other parameters like the thermal expansion coefficient 32 and the difference in the cell parameters between diamond and the substrate 33 have been demonstrated to influence the film adherence and the nucleation density.…”

Section: Discussionmentioning

confidence: 99%

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Diamond film nucleation and interface characterization

et al. 1992

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A powerful micro SIMS technique coupled to a computer driven acquisition system has allowed the simultaneous recording of C~, MoO~, and Si" images of the sample surfaces, or of the transverse cross sections of the Mo-diamond interface. Diamond deposition has been shown to take place on a Mo 2 C layer, and the influence on the nucleation process of Si contamination, coming from the quartz tube etched by H atoms, has been investigated. Contamination can in fact occur during the shutdown procedures or during the whole experiment. This last contamination can be avoided by using suitable pressure ranges or gas combinations. Moreover, the deposition time necessary to obtain well-crystallized diamond films and the nucleation density could be optimized by an in situ pretreatment stage. This treatment reduces the delay observed before nucleation (which would correspond to the carbide formation), and increases the carbon activity at the sample surface.

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