DOI: 10.1109/nano.2002.1032226
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Abstract: The characteristics of a novel nano-scale siliconon-insulator (SOI) device featuring silicide Schottky sourceldrain and field-induced SID extensions induced by a suh-gate were investigated. The new device exhibits unique and high-performance hi-channel operation capability. In this work, particular attention was paid to the effects of suhgate bias on the device operation. It is shown that the applied sub-gate voltage not only increases the on-state current, but also effectively suppresses the off-state leakag…

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