Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

Abstract

Cz p-type Si (100) samples were implanted at room temperature with 160 keV He ions to a dose of 5´10 16 cm -2 and were then followed by 80 keV Si ion implantation at different doses ranging from 10 14 to 5´10 15 cm -2 . Cross-sectional transmission electron microscopy (XTEM) were carried out to study the effects of self-ion implantation induced defects on the thermal evolution of He cavities during subsequent annealing at temperatures from 800 °C to 1150 °C for 1 hour. Our results clearly show that high level of self-ion implantation induced defects can significantly inhibit thermal growth of He cavities. The inhibition effects preferentially occur in the side of cavity band towards the surface. The results suggest that the ejection of interstitials during annealing can go into the He defect region, and interacts with He-vacancy clusters or He cavities there. The capture of interstitials by He cavities is also confirmed by the dissolution of high dose Si ion induced end of range (EOR) defects after high temperature annealing at 1150°C.