Effects of Plasma Process Induced Damages on Organic Gate Dielectrics of Organic Thin-Film Transistors

Abstract

The effects of plasma damages on the organic gate dielectric of the organic thin film transistor (OTFT) during the fabrication process are investigated; metal deposition process on the organic gate insulator by the plasma sputtering mainly generates the process induced damage of bottom contact structured OTFT. For this study, two different deposition methods (thermal evaporation and plasma sputtering) have been tested for their damage effects onto poly(4-vinyl phenol) (PVP) as organic gate dielectric. Unlike thermal evaporation, conventional plasma sputtering process induces serious damages onto the organic layer as increasing the surface energy, changing the surface morphology and degrading OTFT performances.

Commercially applicable, solution-processed organic TFT and its backplane application in electrophoretic displays

“…4(a)) although we could not find any damage in the film deposited on a SiO 2 inorganic GI formed by the same deposition condition. A similar phenomenon of plasma-induced damage is also reported in the case of film formation on a weak organic material [17]. However, when gate metal is deposited under increased Ar partial pressure, cracking on the OGI surface is remarkably suppressed, as shown in Fig.…”

“…In terms of cost, throughput, and large size application, doing so would allow the feasibility of OTFT use as a backplane component available in the conventional processing of flat panel displays (FPDs). However, since the organic material is typically weak and easily broken by plasma damage-such as high energy ions, neutral atoms, or heat produced during the plasma-induced deposition process [16,17]-metal deposition that can be softly formed is predominantly used on the organic layer in spite of its time-costly process, such as the electrode evaporation of Au or ITO for organic devices [16]. To reduce plasma-induced damage during electrode formation on the organic gate dielectric, two primary approaches of gate engineering were carried out: (1) process control of bombardment behavior during sputtering, and (2) material design and its assignment in the gate dielectric.…”

Optical Properties of WO3/Ag/WO3 Multilayer As Transparent Cathode in Top-Emitting Organic Light Emitting Diodes

“…These problems have been addressed by depositing layers of transparent conducting oxides (such as indium tin oxide (ITO)) using radio frequency sputtering to improve the cathode transparency, but the high energy ITO sputtering process degrades The Journal of Physical Chemistry C ARTICLE the organic materials undernearth. 13 The sputtering damage on organic materials can be reduced by using the facing target sputtering (FTS) method. 14 However, even if the FTS shows good progress in reducing the level of sputtering damage, it might be not enough to solve the structural problems of TOLEDs because of the low electron injection efficiency induced by the high work function of ITO (∼4.8 eV) and the incomplete shielding of the high energy charged particles.…”

High-Performance Inverted Tandem Polymer Solar Cells Utilizing Thieno[3,4-c]pyrrole-4,6-dione Copolymer

“…However, these materials are usually deposited by means of a sputtering process, which can cause plasma damage to the underlying organic cell makes it less appealing. 32,33 Based on the aforementioned issues, it is pretty undesirable to fabricate high efficiency tandem cells using a sputtering process. Despite recent advances in photovoltaic technology, especially tandem cells, reports on high performance tandem cells using the inverted architecture remain limited.…”