Effects of interatomic potentials on the determination of the minimum depth of cut in nanomachining

Oluwajobi, Akinjide O.; Chen, Xun

doi:10.1504/ijat.2013.053165

Cited by 6 publications

(4 citation statements)

References 15 publications

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“…Morse, Lennard-Jones, Born-Mayer potential etc) are not compatible to model silicon because they limit atomic interaction within workpiece and the cutting tool (purely repulsive [4]) causing poor reproduction of Cauchy pressure of a material [47]. However, diatomic potential functions are ideal for rare gases and metallic systems [60,61]. Other MD details are shown in table 2.…”

Section: Methodsmentioning

confidence: 99%

Nanometric behaviour of monocrystalline silicon when single point diamond turned—a molecular dynamics and response surface methodology analysis

et al. 2020

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Hard and brittle materials such as silicon and silicon carbide are widely used in aerospace and integrated circuit. They are often poorly machined owing to non-linearity in machining process and complexities in selecting suitable machining parameters and tool geometry. The experimental difficulty involved in observing nanoscale physical phenomena (i.e. in-process measurement problems, inaccessible contact area of tool and workpiece, and the difficulty of surface analysis) has led to the use of molecular dynamics (MD) and response surface methodology (RSM) to investigate effect of tool edge radius, rake and clearance angles on monocrystalline silicon in this research. The response of subsurface deformation depth (SSD), tool temperature, kinetic friction cutting and thrust forces to tool edge radius, rake and clearance angles showed that SSD increased as the rake angle, edge radius and clearance angle increased while kinetic friction reduced as they increased. The increase in SSD as the clearance angle increased as observed in this study can be associated to the interactive/combined influence of the effects of both edge radius and rake angle.

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Section: Methodsmentioning

confidence: 99%

Nanometric behaviour of monocrystalline silicon when single point diamond turned—a molecular dynamics and response surface methodology analysis

et al. 2020

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“…4, which demonstrates the creation of a nano surface on the copper workpiece. [13] The following are steps to be taken, to evaluate the surface roughness of the created nano surface;…”

Section: Methodsmentioning

confidence: 99%

On Atomic Surface Roughness Evaluation

Oluwajobi

Chen

2016

KEM

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The atomic surface finish or roughness can be defined as the roughness limit of a surface. Its value has been demonstrated both in theory and in experiments to be non-zero [1, 2]. This parameter is very important in assessing the quality of high performance nanosurfaces, and so its understanding is very crucial. In this study, multi-pass nanometric atomistic simulations were carried out, with a diamond tool on a copper workpiece to create a nanosurface and the results provide the platform from which the atomic surface roughness was evaluated. The estimated surface roughness (Sa) was in the order of 0.3nm.

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“…The selection of potential function for the MD analysis is critical to ensure the accuracy and reliability of the MD simulation. Appropriate potential functions can correctly simulate the behaviour of atoms to obtain accurate results [36,37]. The Tersoff potential function is a three-body potential function that provides a more realistic description of covalently bonded materials [38].…”

Section: Process Model Set Up and MD Analysis For Sic Scratching Simu...mentioning

confidence: 99%

Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates

Tian

Chen

2020

Int. J. Extrem. Manuf.

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Single crystal silicon carbide (SiC) is widely used for optoelectronics applications. Due to the anisotropic characteristics of single crystal materials, the C face and Si face of single crystal SiC have different physical properties, which may fit for particular application purposes. This paper presents an investigation of the material removal and associated subsurface defects in a set of scratching tests on the C face and Si face of 4H-SiC and 6H-SiC materials using molecular dynamics simulations. The investigation reveals that the sample material deformation consists of plastic, amorphous transformations and dislocation slips that may be prone to brittle split. The results showed that the material removal at the C face is more effective with less amorphous deformation than that at the Si face. Such a phenomenon in scratching relates to the dislocations on the basal plane (0001) of the SiC crystal. Subsurface defects were reduced by applying scratching cut depths equal to integer multiples of a half molecular lattice thickness, which formed a foundation for selecting machining control parameters for the best surface quality.

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Effects of interatomic potentials on the determination of the minimum depth of cut in nanomachining

Cited by 6 publications

References 15 publications

Nanometric behaviour of monocrystalline silicon when single point diamond turned—a molecular dynamics and response surface methodology analysis

Nanometric behaviour of monocrystalline silicon when single point diamond turned—a molecular dynamics and response surface methodology analysis

On Atomic Surface Roughness Evaluation

Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates

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