Abstract:The effects of gate notching profile defect on transistor performance in cell NMOSFETs of lowpower SF2AM device with 0.12 pm channel length were investigated. Experimentally it could be found that the gate notching profile defect causes the serious degradation of the transconductance and the transistor drive current. In the simulation using TSUPREM4, we could manifest that the degradation of transistor characteristic is owing to the penetration of the gate notching into the channel region over the sourceldrain… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.