Effects of buffer layers on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol–gel method

Surface chemical states of barium zirconate titanate thin films prepared by chemical solution deposition

“…Many efforts have been made to improve the dielectric properties of the BZT thin film capacitors, including using conductive oxide electrodes such as (La 0.7 Sr 0.3 )MnO 3 [12], LaNiO 3 [13,14], and (La 0.7 Ca 0.3 )MnO 3 [15]. Effect of seed layers on dielectric properties of Ba(Zr 0.3 Ti 0.7 )O 3 thin films [16], and infrared optical properties of BZT thin films have been reported [17][18][19].…”

Effect of different buffer layers on the microstructure and dielectric properties of BaTiO3 thin films grown on Si substrates

“…It is considered that the microstructure, grain size and grain boundary will all play certain roles in the leakage current behavior. The films with larger grain size and more aligned grain configurations have overall shorter conduction paths along the grain boundaries, which causes an increase in the leakage [10]. Meanwhile, as had been obtained that the BTO film deposited on Pt/Ti/Si exhibit a rather coarser surface, thus the interfacial charge accumulation at the film/electrode interface is unavoidable, which may scatter further the injected carriers, thus reducing their mobility, and may trap the carriers, thus decreasing their density [34].…”

“…Recently, several groups have also investigated the relationship between electrical properties and orientation in several kinds of ferroelectric thin films, i.e. Ba(Zr 0.20 Ti 0.80 )O 3 , PbZr 0.60 Ti 0.40 O 3 , and Ba 0.6 Sr 0.4 TiO 3 thin films [10][11][12]. The results indicate that the electrical properties of the ferroelectric thin films can be significantly improved by controlling the preferred orientations of the films.…”

Ferroelectric and structural instability of (Pb,Ca)TiO3 thin films prepared in an oxygen atmosphere and deposited on LSCO thin films which act as a buffer layer

“…Tang et al have shown that PCT thin films on LaNiO 3 coated fused quartz and Si substrates maintain good dielectric and ferroelectric properties [20]. Effects of LaNiO 3 and CeO 2 buffer layers deposited directly on a platinum electrode surface on the crystallographic orientation, microstructure and electrical properties of BZT thin films have been studied extensively by Gao et al [21]. Among these oxide buffer layers, pseudocubic perovskite La 1 À x Sr x CoO 3 thin films have been intensively studied and have shown a strong influence as a buffer layer [22][23][24].…”