Effects of annealing temperature, ambient humidity and temperature on dielectric properties of sol–gel-derived amorphous alumina thin film

Su, Zhen; Yao, Manwen; Chen, Jianwen; Yao, Xi

doi:10.1007/s10854-017-7055-7

Cited by 6 publications

(2 citation statements)

References 19 publications

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“…Fig. 11B shows the gases released from the sample: H2O (m/z =16, 17,18,19,20), NH3 (m/z = 14, 15,16,17,18), and NO (m/z = 14, 15, 16, 30, 31, 32). 25 The time evolution of NO release (m/z = 30) is shown in Fig.…”

Section: E-beam Exposure Resultsmentioning

confidence: 99%

Indium nitrate hydrate films as EUV resists by evaluating with 92-eV electron beam

Grayson

Valdez

et al. 2023

Advances in Patterning Materials and Processes XL

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Indium nitrate hydrate films are evaluated as potential extreme ultraviolet (EUV) resists. The uniformity and stability of indium nitrate-based sol-gel precursor films are studied as a function of metal composition, concentration, chemical sources, precursor dissolution time, post-application bake (PAB) conditions, and relative humidity during the deposition. 0.1 M indium nitrate solution forms a 20-nm thick resist, ideal for EUV lithography. We find two types of defects: macroscale defects that are visible under an optical microscope and nanoscale defects that can only be detected using an atomic force microscope. Both types of defects are affected by humidity and dissolution time and are likely due to indium nitrate crystals. Once formed, indium nitrate hydrate films show great stability with no changes in defect density up to 3 weeks. Using a 92-eV electron beam as a proxy for the EUV source, preliminary studies show exposed films become insoluble after 10 min exposure (8 mC/cm2 dose), acting as a negative-tone resist. Results of in-situ Fourier-transformed infrared spectroscopy and residual gas analysis during the exposure show that the solubility switch is accompanied by the decomposition of nitrate species and the release of water.

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Section: E-beam Exposure Resultsmentioning

confidence: 99%

Indium nitrate hydrate films as EUV resists by evaluating with 92-eV electron beam

Grayson

Valdez

et al. 2023

Advances in Patterning Materials and Processes XL

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show abstract

“…Humidity is well known to affect sol-gel film formation, especially for hydrous metal oxides during the precursor solution and drying stages. 20,21 In an industrial fab, environmental conditions such as temperature and humidity are rigorously regulated. However, in an academic research laboratory, the ambient environment is not controlled.…”

Section: Humidity Effect and Film Agingmentioning

confidence: 99%

Indium nitrate hydrate films as potential EUV resists: film formation, characterization, and solubility switch assessment using a 92-eV electron beam

Grayson,

Valdez,

et al. 2024

J. Micro/Nanopattern. Mats. Metro.

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Indium nitrate hydrate films are evaluated as potential extreme ultraviolet (EUV) resists. To study the feasibility of these indium nitrate-based sol-gel precursor films as an EUV resist, the uniformity and stability of these films are examined as a function of metal composition, precursor concentration, chemical sources, precursor dissolution time, solvent drying time, post-application bake conditions, and relative humidity during the deposition. A 0.1 M indium nitrate hydrate solution forms a 20-nm thick resist, which is ideal for EUV lithography. We find two types of defects: macroscale defects that are visible under an optical microscope and nanoscale defects that can only be detected using an atomic force microscope. Both types of defects are affected by humidity during spin coating, dissolution time, and water content in the solvent. Hence, they are likely due to undissolved or re-crystallized indium nitrate hydrate crystals. The spin-coated indium nitrate hydrate films show great stability with no changes in defect density for up to 3 weeks. Using a 92-eV electron beam as a proxy for the EUV source, exposed regions of the film become insoluble upon exposure, acting as a negative-tone resist. Results of operando Fourier-transform infrared spectroscopy and residual gas analysis during the exposure show that the solubility switch is accompanied by the decomposition of nitrate species and the release of water. These results demonstrate the potential of indium nitrate hydrate films as an effective inorganic EUV resist.

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Crystallization, microstructure and dielectric properties of the SrO-BaO-Nb2O5-Al2O3-SiO2 based glass ceramics added with ZrO2

Liu

Wang

Ding

et al. 2019

Ceramics International

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Effects of annealing temperature, ambient humidity and temperature on dielectric properties of sol–gel-derived amorphous alumina thin film

Cited by 6 publications

References 19 publications

Indium nitrate hydrate films as EUV resists by evaluating with 92-eV electron beam

Indium nitrate hydrate films as EUV resists by evaluating with 92-eV electron beam

Indium nitrate hydrate films as potential EUV resists: film formation, characterization, and solubility switch assessment using a 92-eV electron beam

Crystallization, microstructure and dielectric properties of the SrO-BaO-Nb2O5-Al2O3-SiO2 based glass ceramics added with ZrO2

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