Effects of annealing on self-organized InAs quantum islands on GaAs(100)

Abstract

Articles you may be interested inPresentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001) Strain relaxation and exciton localization effects on the Stokes shift in InAs x P 1−x /InP multiple quantum wells

Ground state lasing at 1.30 µm from InAs/GaAs quantum dot lasers grown by metal–organic chemical vapor deposition

“…The emission blueshift after annealing is the direct consequence of In-Ga intermixing [2][3][4][5][6][7], while the degradation of the PL intensity depends on the InAs coverage [2]. Mo et al observed that, for QDs grown with large InAs coverage, excessive annealing induced strain relaxation by the generation of dislocations and resulted in a decrease of the PL intensity [17]. In our case, the PL intensity does not degrade when the InAs coverage is below ∼2.3 ML (not shown).…”

Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness

“…2(b). The integrated PL intensity of sample A firstly increases when the T a is higher than 700 1C, and then decreases when the T a is higher than 800 1C, indicating a process of defect elimination at T a p800 1C [10] and the generation and multiplication of dislocations induced by strong strain relaxation in the sample at T a X850 1C [11]. The PL linewidth of sample A decreases after RTA treatment, in accordance with the usual RTA treatment results of QDs, which is attributed to the intermixing-induced narrowing of the distribution of density of states of nanostructures [7,8,12].…”

Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns

“…The active (QD) and overgrown layers, however, have different growth temperature requirements: QDs growth temperature is low (approximately 470°C to 520°C) to prevent In desorption, but subsequent overlayer growth temperature is high (580°C and above), especially if the layer contains slow-diffusing species such as Al. The fundamental difference in growth temperature requirements and its inevitability lead to extensive investigation of the properties of InGaAs QDs annealed in situ [ 12 - 15 ] and ex situ [ 15 - 21 ]. In terms of luminescence, it is well established that conventional InGaAs QDs that underwent annealing would: (1) exhibit a blueshift in their ground-state emission, (2) have narrower linewidth, and, in some cases, (3) emit at an increased intensity due to interdiffusion and intermixing of cations and the reduction in non-radiative recombination centers in the surrounding matrix [ 13 - 20 ].…”