Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

Balaji, M.; Claudel, A.; Fellmann, V.; Gélard, Isabelle; Blanquet, Elisabeth; Boichot, R.; Pierret, Aurélie; Attal‐Trétout, Brigitte; Crisci, Alexandre; Coindeau, S.; Roussel, Hervé; Pique, D.; Baskar, K.; Pons, M.

doi:10.1016/j.jallcom.2012.02.111

Cited by 43 publications

(32 citation statements)

References 39 publications

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“…The only degree of freedom offered to explain such variability is the tensile stress due to the primary island coalescence. It allows the matching of all the measured stresses by involving islands sizes with sizes in the 10-50 nm range, in agreement with literature results [13,32,55] (see next section). The primary island nucleation is the main contributor to thin film stress when depositing AlN on sapphire.…”

Section: General Discussion On the Effect Of Process Parameterssupporting

confidence: 88%

“…So we can conclude that within the range of parameters tested, small nucleation islands or strong tensile stresses are correlated with good quality of AlN layers. This conclusion strengthens the results of Balaji et al [13,32,55] showing that low temperature nucleation layer (so small nucleation islands with high surface density) prior to epitaxial growth of AlN could be beneficial for improving crystal quality.…”

Section: Correlation Between Responsessupporting

confidence: 89%

“…Deceptively, no parameter seems to play a major role even if the FWHM values are contrasted (from 355 to 5324 arcsec, so a density of (screw) dislocations of 2.74 × 10 8 to 1.58 × 10 11 cm −2 [13]). This is essentially due to the huge error bar at ±2σ (experiment #17 present a significantly better quality than #1-3).…”

Section: Resultsmentioning

confidence: 99%

“…For this last application, the most serious challenge is the reduction of defect density in thin films grown on foreign substrates, which limits both efficiency and reliability of the devices [6,7]. Different methods have been used to grow AlN with a low dislocation density such as physical vapor transport (PVT) [8], solution growth [9], thermal nitridation [10], metalorganic chemical vapor deposition (MOCVD) [11] and hydride (or halogen) vapor phase epitaxy (HVPE) [12,13]. The most successful methods to provide substrates of high structural quality are the PVT method [8] or a combination of PVT and HVPE methods [14,15].…”

Section: Introductionmentioning

confidence: 99%

“…All the experiments described in Table 1 led to epitaxial growth on (0001) sapphire. No disorientation is observed and AlN presents its classical orientation AlN (0001)//sapphire (0001) and AlN //sapphire [11][12][13][14][15][16][17][18][19][20]. Cracks could be observed on the surface of some samples (see Table 2 for details).…”

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confidence: 95%

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Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach

et al. 2017

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Abstract:This study aims to present the interest of using a design of experiments (DOE) approach for assessing, understanding and improving the hydride vapor phase epitaxy (HVPE) process, a particular class of chemical vapor deposition (CVD) process. The case of the HVPE epitaxial growth of AlN on (0001) sapphire will illustrate this approach. The study proposes the assessment of the influence of 15 process parameters on the quality or desired properties of the grown layers measured by 9 responses. The general method used is a screening design with the Hadamard matrix of order 16. For the first time in the growth of AlN by CVD, a reliable estimation of errors is proposed on the measured responses. This study demonstrates that uncontrolled release of condensed species from the cold wall is the main drawback of this process, explaining many properties of the grown layers that could be mistakenly attributed to other phenomena without the use of a DOE. It appears also that the size of nucleation islands, and its corollary, the stress state of the layer at room temperature, are key points. They are strongly correlated to the crystal quality. Due to the intrinsic limitations of the screening design, the complete optimization of responses cannot be proposed but general guidelines for hydride (or halogen) vapor phase epitaxy (HVPE) experimentations, in particular with cold wall apparatus, are given.

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Section: General Discussion On the Effect Of Process Parameterssupporting

confidence: 88%

Section: Correlation Between Responsessupporting

confidence: 89%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 95%

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Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach

et al. 2017

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Growth of boron nitride films on w‐AlN (0001), 4° off‐cut 4H‐SiC (0001), W (110) and Cr (110) substrates by Chemical Vapor Deposition

Coudurier

Chubarov

Boichot

et al. 2016

Crystal Research and Technology

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International audienceBoron Nitride is a promising group 13-group 15 compound material that exhibits various interesting properties like wide band gap, chemical stability, attractive mechanical properties and other. The growth behavior of this material has not been investigated in sufficient details to tailor properties of the resulting films. In this work we present the results on the growth of turbostratic boron nitride (t-BN) thin films at a relatively high growth rate of 3 mu m/h with the aim to investigate the potential use of boron trichloride in combination with ammonia as precursors for growth. Deposition experiments were conducted in a vertical cold wall high temperature chemical vapor deposition reactor in the temperature range 1000 degrees C-1700 degrees C depending on the substrate used. Templates of w-AlN (0001), 4 degrees off-cut 4H-SiC (0001), Cr (110) and W (110) were employed as substrates for the BN growth. As-grown BN layers were characterized by Scanning Electron Microscopy, X-Ray Diffraction, Electron Diffraction and Raman Spectroscopy. The results indicate that temperature and N/B ratio have a great influence on the crystallinity of the deposited films. For AlN and SiC substrates, a temperature of 1600 degrees C and N/B ratio in range between 3 and 7.5 were identified as the best parameters for the growth of a 2 mu m thick t-BN layer with a spacing between basal planes of about 3.36 angstrom compare to the 3.33 angstrom spacing between basal planes of hexagonal or rhombohedral BN (h-BN or r-BN). For Cr and W substrates which have a lower mismatch with h-BN (1 and 8.8 %), layers of t-BN were deposited at much lower temperature (1000 degrees C-1150 degrees C) with a spacing between basal planes of 3.5 angstrom and morphology similar to that observed on SiC substrates. We obtained t-BN layers with in plane strong disorder but out of plane orientation (c-axis normal to the surface)

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CFD modeling of the high-temperature HVPE growth of aluminum nitride layers on c-plane sapphire: from theoretical chemistry to process evaluation

et al. 2013

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International audienceThis study presents numerical modeling based on a relatively limited number of gas-phase and surface reactions to simulate the growth rate of aluminum nitride layers on AlN templates and c-plane sapphire in a broad range of deposition parameters. Modeling results have been used to design particular experiments in order to understand the influence of the process parameters on the crystal quality of AlN layers grown in a high-temperature hydride vapor-phase epitaxy process fed with NH3, AlCl3, and H-2. Modeling results allow to access to very interesting local quantities such as the surface site ratio and local supersaturation. The developed universal model starting from local parameters might be easily transferred to other reactor geometry and process conditions. Among the investigated parameters (growth rate, temperature, local supersaturation, gas-phase N/Al ratio, and local surface site N/Al ratio), only the growth rate/supersaturation or growth rate/temperature relationships exhibit a clear process window to use in order to succeed in growing epitaxial AlN layers on c-plane sapphire or AlN templates. Gas-phase N/Al ratio and local surface site N/Al ratio seem to play only a secondary role in AlN epitaxial growt

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Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

Cited by 43 publications

References 39 publications

Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach

Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach

Growth of boron nitride films on w‐AlN (0001), 4° off‐cut 4H‐SiC (0001), W (110) and Cr (110) substrates by Chemical Vapor Deposition

CFD modeling of the high-temperature HVPE growth of aluminum nitride layers on c-plane sapphire: from theoretical chemistry to process evaluation

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