Effective Use of UV‐Ozone Oxide in Silicon Solar Cell Applications

Zin, Ngwe; Bakhshi, Sara; Gao, Munan; Ali, Haider; Kashkoush, Ismail; Schoenfeld, Winston V.

doi:10.1002/pssr.201800488

Cited by 7 publications

(2 citation statements)

References 25 publications

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“…Using the application example of organic semiconductor components, the necessary hole-injection layer (HIL) for example, poly(3,4-ethylene-dioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) is typically prepared from a water-based solution [39][40][41]. Therefore, the surface must be clean and primed hydrophilic to allow subsequent coating processes.…”

Section: Introductionmentioning

confidence: 99%

Cost-effective equipment for surface pre-treatment for cleaning and excitation of substrates in semiconductor technology

et al. 2022

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This article presents a cost-effective ultraviolet-ozone cleaner (UV/O3 Cleaner) for surface pre-treatment of substrates in the field of semiconductor technology. The cleaner consists of two chambers, the upper one contains the electronics, including the time counter. The lower chamber contains the two UV sterilisation lamps and a UV reflector of anodized aluminium, which confines the area of high Ozone concentration in the area of interest. The device is successfully used for surface cleaning and modification of different materials. To this end, the two important wavelengths 253.7 nm (excitation of organic residues) and 184.9 nm (production of ozone from the atmospheric environment as a strong oxidant) were first detected. The effectiveness of UV/O3 cleaning is demonstrated by improving the properties of indium tin oxide (ITO) for OLED fabrication. The contact angle of water to ITO could be reduced from 90° to 3° and for diiodomethane, it was reduced from 55° to 31° within the 10 min of irradiation. This greatly improved wettability for polar and non-polar liquids can increase the flexibility in further process control. In addition, an improvement in wettability is characterized by measuring the contact angles for titanium dioxide (TiO2) and polydimethylsiloxane (PDMS). The contact angle of water to TiO2 decreased from 70° to 10°, and that of diiodomethane to TiO2 from 54° to 31°. The wettability of PDMS was also greatly increased. Here, the contact angle of water was reduced from 109° to 24° and the contact angle to diiodomethane from 89° to 49°. Article Highlights We report a cost-effective dry-cleaning device for surface cleaning and modification based on ultraviolet-ozone irradiation. Contact angle measurements show an increase of wettability for different materials due to surface modification. The UVO3 pre-treatment improves layer formation and optoelectrical properties of OLEDs.

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Section: Introductionmentioning

confidence: 99%

Cost-effective equipment for surface pre-treatment for cleaning and excitation of substrates in semiconductor technology

et al. 2022

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“…In this quest, the ozone-based oxidation technique is exquisitely implemented in processing of c-Si solar cells. [27][28][29][30] Previous studies [31][32][33] showed the potential of ozone-dissolved deionized water (DI-O 3 ) oxide for surface passivation and cleaning in c-Si solar cells. However, there is lack of work on pinholes investigation in DI-O 3 oxide layers.…”

Section: Introductionmentioning

confidence: 99%

Pinhole‐Free Ultrathin Silicon Oxide Layer by Ozone‐Dissolved Deionized Water

Kumar

Gao

Zin

2022

Physica Rapid Research Ltrs

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The pinhole‐free silicon oxide (SiO x ) layer grown using dissolved ozone in deionized water (DI‐O3) is demonstrated. An ultrathin SiO x layer of thickness 1.53 nm ± 1.5% is grown on silicon wafer using 7 ppm DI‐O3. A four‐step methodology, including 25 wt% aq. tetramethylammonium hydroxide (TMAH) solution at 80 °C, is employed to magnify the pinhole signatures in the underlying silicon and visualized with dark‐field optical microscopy (DFOM) and scanning electron microscopy (SEM). The DFOM images show spots on the surface of wafer that originate from airborne particles, contamination, etc. SEM images reveal the absence of etch pits in silicon even after etching of SiO x /silicon in TMAH for 300 s. The minority carrier lifetime and interface states density in AlO x ‐capped SiO x /Si structure are ≥2 ms at carrier density of 1 × 1015 cm−3 and less than 2 × 1011 cm−2 eV−1, respectively.

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Improving the Passivation of Molybdenum Oxide Hole‐Selective Contacts with 1 nm Hydrogenated Aluminum Oxide Films for Silicon Solar Cells

Gregory

Feit

Gao

et al. 2020

Physica Status Solidi (a)

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The intrinsic and doped amorphous silicon layers in silicon heterojunction solar cells parasitically absorb light in the short wavelength region of the solar spectrum, lowering the generation current available to the device. In this work we present a promising alternative to the hole-selective amorphous silicon contact layers using only wide-bandgap, transparent oxide materials. Using thermal atomic layer deposition, we deposit a 1 nm hydrogenated aluminum oxide layer followed by a 4 nm molybdenum oxide layer on n -type crystalline silicon. This contact stack provides an effective carrier lifetime of 1.14 ms. We show that the molybdenum oxide layer is successfully deposited with a high work function, which facilitates efficient hole-extraction and repels majority carriers from the c-Si surface. We then record the implied open-circuit voltage, saturation current density, and contact resistivity as a function of contact annealing temperature and show that they are relatively stable up to 200 ℃.

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Effective Use of UV‐Ozone Oxide in Silicon Solar Cell Applications

Cited by 7 publications

References 25 publications

Cost-effective equipment for surface pre-treatment for cleaning and excitation of substrates in semiconductor technology

Cost-effective equipment for surface pre-treatment for cleaning and excitation of substrates in semiconductor technology

Pinhole‐Free Ultrathin Silicon Oxide Layer by Ozone‐Dissolved Deionized Water

Improving the Passivation of Molybdenum Oxide Hole‐Selective Contacts with 1 nm Hydrogenated Aluminum Oxide Films for Silicon Solar Cells

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