Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance

Maršík, Přemysl; Urbanowicz, Adam; Verdonck, Patrick; Roest, David De; Sprey, Hessel; Baklanov, Mikhaı̈l R.

doi:10.1016/j.tsf.2011.01.339

Cited by 27 publications

(24 citation statements)

References 37 publications

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“…The choice of the longer wavelength UV radiation profile is apparently based on reports of the damaging effect of short wavelength UV radiation on porous dielectric materials in the form of C-stripping reactions, crosslinking and film densification. [81][82][83] In contrast, a group at Applied Materials reports the use of reactive carbon precursors in the presence of heat and UV radiation to treat the defective film. 79,84 Suitable carbon containing reagents include acetylene, ethylene, 1,3-butadiene and isoprene.…”

mentioning

confidence: 99%

Toward Successful Integration of Porous Low-k Materials: Strategies Addressing Plasma Damage

Lionti

Volksen

Magbitang

et al. 2014

ECS J. Solid State Sci. Technol.

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The increasing sensitivity of porous low dielectric constant materials to process damage constitutes a major roadblock to their implementation in back-end-of-the-line (BEOL) wiring structures for advanced technology nodes. In the early 2000s and in anticipation to future low-k related integration challenges, the semiconductor industry started to investigate the possibility to repair or prevent this damage. It is remarkable that the most disruptive solutions proposed today are inspired from the work initiated more than 10 years ago. In this review we first describe the accepted mechanisms for plasma damage, followed by a quick summary of the methods used to quantify its extent on both blanket films and patterned structures. We then report on the past and current strategies developed to mitigate the plasma damage of porous, low-k materials during damascene integration processes.

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mentioning

confidence: 99%

Toward Successful Integration of Porous Low-k Materials: Strategies Addressing Plasma Damage

Lionti

Volksen

Magbitang

et al. 2014

ECS J. Solid State Sci. Technol.

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“…The NB UV light has sufficient energy to break Si-CH 3 bonds forming dangling bonds, which then are saturated by hydrogen atoms forming less volumetric Si-H groups; the NB UV cure also provides extra matrix cross-linkage. 6,7 Both processes decrease the free volume (increase the matrix density) and improve mechanical properties. 8,9 In addition to the free volume formed because of the presence of terminating groups, additional artificial porosity in ultra low-k materials is introduced by sacrificial porogen.…”

mentioning

confidence: 99%

Intrinsic effect of porosity on mechanical and fracture properties of nanoporous ultralow-k dielectrics

Vanstreels¹,

Wu²,

Verdonck³

et al. 2012

Appl. Phys. Lett.

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“…This is evidence that the plasma is breaking the Si−CH 3 bonds, which are converted into Si−O and Si−H bonds. 37 The reaction mechanism between H 2 plasma and the low-k is described as 38…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

Impact of Plasma Pretreatment and Pore Size on the Sealing of Ultra-Low-k Dielectrics by Self-Assembled Monolayers

et al. 2014

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Self-assembled monolayers (SAMs) from an 11-cyanoundecyltrichlorosilane (CN-SAM) precursor were deposited on porous SiCOH low-k dielectrics with three different pore radii, namely, 1.7, 0.7, and lower than 0.5 nm. The low-k dielectrics were first pretreated with either O2 or He/H2 plasma in order to generate silanol groups on the hydrophobic pristine surface. Subsequently, the SAMs were chemically grafted to the silanol groups on the low-k surface. The SAMs distribution in the low-k films depends on the pore diameter: if the pore diameter is smaller than the size of the SAMs precursors, the SAM molecules are confined to the surface, while if the pore diameter exceeds the van der Waals radius of the SAMs precursor, the SAMs molecules reach deeper in the dielectric. In the latter case, when the pore sidewalls are made hydrophilic by the plasma treatment, the chemical grafting of the SAM precursors follows the profile of the generated silanol groups. The modification depth induced by the O2 plasma is governed by the diffusion of the oxygen radicals into the pores, which makes it the preferred choice for microporous materials. On the other hand, the vacuum ultraviolet (VUV) light plays a critical role, which makes it more suitable for hydrolyzing mesoporous materials. In addition to the density of the surface -OH groups, the nanoscale concave curvature associated with the pores also affects the molecular packing density and ordering with respect to the self-assembly behavior on flat surfaces. A simple model which correlates the low-k pore structure with the plasma hydrophilization mechanism and the SAMs distribution in the pores is presented.

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Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance

Cited by 27 publications

References 37 publications

Toward Successful Integration of Porous Low-k Materials: Strategies Addressing Plasma Damage

Toward Successful Integration of Porous Low-k Materials: Strategies Addressing Plasma Damage

Intrinsic effect of porosity on mechanical and fracture properties of nanoporous ultralow-k dielectrics

Impact of Plasma Pretreatment and Pore Size on the Sealing of Ultra-Low-k Dielectrics by Self-Assembled Monolayers

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