Effect of Ti doping on the structural, electrical and magnetic properties of GaFeO3

Nanoscale Magnetization Reversal by Magnetoelectric Coupling Effect in Ga0.6Fe1.4O3 Multiferroic Thin Films

“…Gallium ferrite (Ga x Fe 2– x O 3 ), as a multiferroic material, has ferroelectric and ferrimagnetic characteristics with the magnetic transition temperature tunable to room temperature (RT) and above by tailoring the Ga/Fe ratio. − As far as we know, the research for gallium ferrite has been ongoing for more than 60 years, several groups have carried out a multitude of studies to improve the performances. In order to solve the fatal leakage current problem and enhance ferroelectricity, initially, scientists shifted their research object from bulk Ga x Fe 2– x O 3 single crystal or polycrystalline to fewer defects thin films, , and after that, cationic and anionic doping methods were also explored, as evidenced in (Al, Co, Zn)-doped Ga x Fe 2– x O 3 Ceramics, − Ti-doped GaFe x O 3 polycrystalline, (Cr, Mg)-doped Ga 0.6 Fe 1.4 O 3 thin films, , and (C, N, S)-doped stoichiometric GaFeO 3 single crystal . In addition, Ga x Fe 2– x O 3 materials with different amounts of Fe were also studied so as to improve the magnetic properties .…”