Effect of Ti doping concentration on resistive switching behaviors of Yb₂O₃ memory cell

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two‐Dimensional Layered Materials

“…For most conventional doped RRAM devices, RS parameters can be improved to some extent, due to the better environment for CF's growth inside RS layer compared to intrinsic devices. Both V SET and V RESET become lower ( Figure a,b,c), because the lower bond energy between dopants and oxygen atoms lead to low power consumption during the growth and rupture of CF . Moreover, R off /R on ratio and the uniformity of resistance improve (Figure d), with better endurance behavior (>10 5 ) .…”

“…However, for doped devices, it will be much easier to achieve CF formation with modulated microstructure, including higher‐density oxygen vacancies and more regular grain boundaries. Therefore, the forming voltage becomes lower and even forming‐free phenomena can be observed in some cases.…”

Effect of Mn doping on electroforming and threshold voltages of bipolar resistive switching in Al/Mn : NiO/ITO

“…19,24 The defects caused by doping Mn and lower formation energy of Mn-O compounds facilitate the formation of oxygen vacancy, which is helpful to the formation of conductive laments. 25 Similarly, doping with trivalent impurity into ZrO 2 and HfO 2 can provide the initially high concentration of oxygen vacancies. 26 In addition, the formation of conductive laments is easy to grow along the grain boundary.…”

Current conduction and resistive switching characteristics of Sm2O3 and Lu2O3 thin films for low-power flexible memory applications

“…3(a), the O 1s line at the surface of Sm 2 O 3 thin film consists of a low peak binding energy at 528.8 eV for Sm 2 O 3 , 28 and a high peak binding energy at 531.4 eV, usually attributed to oxide defects or non-lattice oxygen ions. 29 As shown in Fig. 3 30 Other Sm 3d peak at lower binding energy of 1079.9 eV is attributed to the existence of Sm ions in the oxide thin film.…”

“…The O 1s spectrum at the surface of Lu 2 O 3 thin film consists of two peaks binding energy at 529.2 eV for Lu 2 O 3 and the other at 531.4 eV for defect formation, as observed in Sm 2 O 3 . 29,32 The Lu 4d line spectrum consists of a higher peak binding energy at 196 eV for Lu 2 O 3 and a lower peak binding energy at 194.4 eV, usually depicted as Lu ions. 32 The less defects formation in the Lu 2 O 3 thin film corroborates well with the smoother surface morphology as shown in AFM image.…”