Effect of thermal aging on the interfacial structure of SnAgCu solder joints on Cu

Peng, Weiqun; Monlevade, Eduardo Franco de; Marques, Marcelo Giulian

doi:10.1016/j.microrel.2006.12.006

Cited by 141 publications

(85 citation statements)

References 11 publications

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“…The IMCs were clearly found in all interfaces that associated with thermal-induced diffusion behavior. 18,19) In the case of A1 and A2 interfaces, whether (e)). Previous literatures indicated that these IMCs structures were corresponding to Cu 6 Sn 5 phase.…”

Section: Resultsmentioning

confidence: 99%

Effects of Electrical Current on Microstructure and Interface Properties of Sn–Ag–Cu/Ag Photovoltaic Ribbons

et al. 2013

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This study presents an electrical current testing that is based on the SnxAg0.5Cu (x = 1, 3 mass%) photovoltaic (PV) ribbon, and investigates the growth mechanism of the intermetallic compounds (IMCs). The microstructure of both alloy solders contains the eutectic region (¢-Sn+Cu 6 Sn 5 +Ag 3 Sn) and the base phases (¢-Sn). The eutectic phases in the Sn3Ag0.5Cu (SAC305) alloy presented a continuous distribution, and its amount was higher. After soldering, the Cu 6 Sn 5 and Ag 3 Sn IMCs were found at the interfaces, and their morphologies were dominated by Ag contents in the SnAgCu (SAC) solder. The whole interfacial characteristics of IMCs were affected after biasing for 40 h. The growth behavior of these IMCs was controlled by the bias-induced thermal diffusion mechanism and the evolution of IMC morphology was dominated by the growth dynamics. The IMCs, formed at the interfaces (SAC/Cu, SAC/Ag), dominated the series resistance of the PV ribbon.

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Section: Resultsmentioning

confidence: 99%

Effects of Electrical Current on Microstructure and Interface Properties of Sn–Ag–Cu/Ag Photovoltaic Ribbons

et al. 2013

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“…This controls diffusion through the solid IMC also when the low-melting point metal is melted. If the temperature is raised to the melting point without this interface IMC formed, the system is prone to scallop growth of IMCs, with voids in the bond-line as a result [13,14].…”

Section: Bonding Profilesmentioning

confidence: 99%

Intermetallic Bonding for High-Temperature Microelectronics and Microsystems: Solid-Liquid Interdiffusion Bonding

Aasmundtveit¹,

Luu²,

Nguyen³

et al. 2018

Intermetallic Compounds - Formation and Applications

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Solid-liquid interdiffusion (SLID) bonding for microelectronics and microsystems is a bonding technique relying on intermetallics. The high-melting temperature of intermetallics allows for system operation at far higher temperatures than what solder-bonded systems can do, while still using similar process temperatures as in common solder processes. Additional benefits of SLID bonding are possibilities of fine-pitch bonding, as well as thin-layer metallurgical bonding. Our group has worked on a number of SLID metal systems. We have optimized wafer-level Cu-Sn SLID bonding to become an industrially feasible process, and we have verified the reliability of Au-Sn SLID bonding in a thermally mismatched system, as well as determined the actual phases present in an Au-Sn SLID bond. We have demonstrated SLID bonding for very high temperatures (Ni-Sn, having intermetallics with melting points up to 1280°C), as well as SLID with low process temperatures (Au-In, processed at 180°C, and Au-In-Bi, processed at 90-115°C). We have verified experimentally the high-temperature stability for our systems, with quantified strength at temperatures up to 300°C for three of the systems: Cu-Sn, Au-Sn and Au-In.Keywords: microelectronics/microsystem assembly, bonding technology, harsh environments, wafer processing, reliability, transient liquid phase © 2018 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Motivation for SLID The challenge of die attach and interconnectionFor all electronic systems, the attachment of components to substrates and their electrical connection is a crucial part of the system. Traditionally, the processes for attachment and interconnection have been considered more a craft than a science. The historical focus of electronics and microtechnology has been on the design, manufacturing and testing of components, circuits and devices, rather than on the system integration and the processes needed for actually building the system. The 'electronic revolution' has given ever-increasing performance of devices at ever-decreasing prices for more than half a century. Initial milestones were the invention of the transistor (1947) and the integrated circuit (IC) (1958). The driving factor has been a continuous decrease in size (of components and on features of components) and cost, made possible through batch processing of silicon wafers. Single-crystal silicon is a very well-defined material with extremely well-characterized properties, allowing process technology that yields extremely small features (10 nm by 2017, with a further decrease expected). Miniaturization of components and the use of large Si wafers give a huge number of components manufactured in every batch, lowering the cost. Furthermore, miniaturization allows an increase in operating frequency (or a decrease...

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“…The lines, which represent the activation energy (ÀQ/R), all have a similar slope, corresponding to Q = 50 kJ/mol(mol K) to 80 kJ/mol (mol K). 10,19,26 However, the intercepts [which represent the diffusion coefficient, ln (k 0 )] vary significantly between the studies. Liu et al 25 suggested that the Cu grain size has a significant effect on the growth rate and thickness of IMC formation.…”

Section: Kinetics Model Estimationmentioning

confidence: 99%

Optimized Cu-Sn Wafer-Level Bonding Using Intermetallic Phase Characterization

Luu

Duan

Aasmundtveit

et al. 2013

Journal of Elec Materi

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The objective of this study is to optimize the Cu/Sn solid-liquid interdiffusion process for wafer-level bonding applications. To optimize the temperature profile of the bonding process, the formation of intermetallic compounds (IMCs) which takes place during the bonding process needs to be well understood and characterized. In this study, a simulation model for the development of IMCs and the unreacted remaining Sn thickness as a function of the bonding temperature profile was developed. With this accurate simulation model, we are able to predict the parameters which are critical for bonding process optimization. The initial characterization focuses on a kinetics model of the Cu 3 Sn thickness growth and the amount of Sn thickness that reacts with Cu to form IMCs. As-plated Cu/Sn samples were annealed using different temperatures (150°C to 300°C) and durations (0 min to 320 min). The kinetics model is then extracted from the measured thickness of IMCs of the annealed samples.

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Effect of thermal aging on the interfacial structure of SnAgCu solder joints on Cu

Cited by 141 publications

References 11 publications

Effects of Electrical Current on Microstructure and Interface Properties of Sn–Ag–Cu/Ag Photovoltaic Ribbons

Effects of Electrical Current on Microstructure and Interface Properties of Sn–Ag–Cu/Ag Photovoltaic Ribbons

Intermetallic Bonding for High-Temperature Microelectronics and Microsystems: Solid-Liquid Interdiffusion Bonding

Optimized Cu-Sn Wafer-Level Bonding Using Intermetallic Phase Characterization

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Effect of thermal aging on the interfacial structure of SnAgCu solder joints on Cu

Cited by 141 publications

References 11 publications

Effects of Electrical Current on Microstructure and Interface Properties of Sn&ndash;Ag&ndash;Cu/Ag Photovoltaic Ribbons

Effects of Electrical Current on Microstructure and Interface Properties of Sn&ndash;Ag&ndash;Cu/Ag Photovoltaic Ribbons

Intermetallic Bonding for High-Temperature Microelectronics and Microsystems: Solid-Liquid Interdiffusion Bonding

Optimized Cu-Sn Wafer-Level Bonding Using Intermetallic Phase Characterization

Contact Info

Product

Resources

About

Effects of Electrical Current on Microstructure and Interface Properties of Sn–Ag–Cu/Ag Photovoltaic Ribbons

Effects of Electrical Current on Microstructure and Interface Properties of Sn–Ag–Cu/Ag Photovoltaic Ribbons