Effect of the growth conditions on the anisotropy, domain structures and the relaxation in Co thin films

Mallik, Srijani; Mallick, Sougata; Bedanta, Subhankar

doi:10.1016/j.jmmm.2016.11.132

Cited by 22 publications

(15 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The CoFeB target is at an angle of 30° with respect to the substrate normal due to the in-built geometry of the deposition system. Such an oblique-angle deposition-induced uniaxial anisotropy has been reported earlier. ,− It should be noticed that there is a change in the coercive field ( H C ) in the bilayer samples as compared to the single-layer reference sample. The values of H C are 1.23, 0.71, 0.91, and 0.81 mT for samples S1, S2, S4, and S5, respectively.…”

Section: Resultssupporting

confidence: 78%

Spinterface-Induced Modification in Magnetic Properties in Co₄₀Fe₄₀B₂₀/Fullerene Bilayers

et al. 2021

Self Cite

View full text Add to dashboard Cite

Organic semiconductor/ferromagnetic bilayer thin films can exhibit novel properties due to the formation of spinterface at the interface. Buckminsterfullerene (C60) has been shown to exhibit ferromagnetism at the interface when it is placed next to a ferromagnet (FM) such as Fe or Co. Formation of a spinterface occurs due to the orbital hybridization and spin-polarized charge transfer at the interface. In this work, we have demonstrated that one can enhance the magnetic anisotropy of the low Gilbert damping alloy CoFeB thin film by introducing a C60 layer. We have shown that anisotropy increases by increasing the thickness of C60, which might be a result of the formation of a spinterface. However, the magnetic domain structure remains the same in the bilayer samples as compared to that in the reference CoFeB film.

show abstract

Section: Resultssupporting

confidence: 78%

Spinterface-Induced Modification in Magnetic Properties in Co₄₀Fe₄₀B₂₀/Fullerene Bilayers

et al. 2021

Self Cite

View full text Add to dashboard Cite

show abstract

“…The mean grey scale intensity of domain images is plotted with respect to its corresponding time to obtain the relaxation curve. Similar relaxation study have been previously described using single and double exponential decay behavior in case of both continuous thin films and MAL arrays with in-plane anisotropy 9 – 11 , 28 .…”

Section: Resultssupporting

confidence: 69%

Relaxation dynamics in magnetic antidot lattice arrays of Co/Pt with perpendicular anisotropy

Mallick

Mishra

Bedanta

2018

Sci Rep

Self Cite

View full text Add to dashboard Cite

The topic of magnetic antidot lattice (MAL) arrays has drawn attention from both fundamental research as well as from application point of view. MAL arrays are promising candidates for making domain engineering in thin films. For various applications it is necessary to understand the magnetization reversal mechanism as well as the relaxation dynamics. In this context we have studied magnetic antidot lattice (MAL) arrays of Co/Pt with perpendicular anisotropy fabricated by combination of photolithography and sputtering deposition. Kerr microscopy domain imaging for the continuous thin film reveals the formation of typical bubble domains of perpendicular media with high anisotropy. However, presence of periodic holes in the MAL arrays lead to nucleation of localised smaller bubbles. We have performed simulations using object oriented micromagnetic framework (OOMMF) which reproduced the experimental results even considering antidot arrays in nano dimension. In literature it has been reported that in MAL arrays with in-plane anisotropy the domain propagation gets significantly hindered by the presence of the holes. However here we show that in perpendicularly magnetized Co/Pt the propagation of the domain walls is not restricted by the presence of the antidots. Further we have performed magnetic relaxation study and found that the global relaxation time for the MAL arrays of Co/Pt is faster as compared to it’s parent thin film. This behavior is opposite to what has been observed in literature for in-plane magnetized MAL arrays.

show abstract

“…In order to facilitate the observation, we only give the atomic distribution at the interface. 35,36 In order to investigate the stability of (001) SrHfO 3 /GaAs interface, we also calculate the interface binding energy, which is defined as 37…”

Section: Resultsmentioning

confidence: 99%

“…This difference is mainly due to different film growth mechanisms. 35,36 In order to investigate the stability of (001) SrHfO 3 /GaAs interface, we also calculate the interface binding energy, which is defined as 37…”

Section: Resultsmentioning

confidence: 99%

Interface spacing, stability, band offsets, and electronic properties on a (001) SrHfO3/GaAs interface: First-principles calculations

Shi

Xiu

et al. 2018

Journal of Applied Physics

View full text Add to dashboard Cite

SrHfO 3 is a potential dielectric material for metal-oxide-semiconductor (MOS) devices. SrHfO 3 /GaAs interface has attracted attention due to its unique properties. In this paper, the interface properties of (001) SrHfO 3 /GaAs are investigated by first principles calculations based on density functional theory (DFT). First of all, the adsorption behavior of Sr, Hf and O on GaAs surface is investigated. O has lower adsorption energy on Ga surface than on As surface. Then, some possible (0 0 1) SrHfO 3 /GaAs configurations are considered to analyze the interface spacing, stability, band offsets and charge transfer. HfO 2 /Ga(2) and SrO/Ga(1) configurations in binding energy are lower than other interface configurations, indicating that they are more stable. At last, we study the electronic properties of HfO 2 /Ga(2) and SrO/Ga(1) configurations. The electronic density of states suggests that the systems exhibit metallic behavior. The band offset and charge transfer are related to the interface spacing. The valence band offset (VBO) and charge transfer will decrease with increasing interface spacing.

show abstract

Effect of the growth conditions on the anisotropy, domain structures and the relaxation in Co thin films

Cited by 22 publications

References 33 publications

Spinterface-Induced Modification in Magnetic Properties in Co₄₀Fe₄₀B₂₀/Fullerene Bilayers

Spinterface-Induced Modification in Magnetic Properties in Co₄₀Fe₄₀B₂₀/Fullerene Bilayers

Relaxation dynamics in magnetic antidot lattice arrays of Co/Pt with perpendicular anisotropy

Interface spacing, stability, band offsets, and electronic properties on a (001) SrHfO3/GaAs interface: First-principles calculations

Contact Info

Product

Resources

About

Effect of the growth conditions on the anisotropy, domain structures and the relaxation in Co thin films

Cited by 22 publications

References 33 publications

Spinterface-Induced Modification in Magnetic Properties in Co40Fe40B20/Fullerene Bilayers

Spinterface-Induced Modification in Magnetic Properties in Co40Fe40B20/Fullerene Bilayers

Relaxation dynamics in magnetic antidot lattice arrays of Co/Pt with perpendicular anisotropy

Interface spacing, stability, band offsets, and electronic properties on a (001) SrHfO3/GaAs interface: First-principles calculations

Contact Info

Product

Resources

About

Spinterface-Induced Modification in Magnetic Properties in Co₄₀Fe₄₀B₂₀/Fullerene Bilayers

Spinterface-Induced Modification in Magnetic Properties in Co₄₀Fe₄₀B₂₀/Fullerene Bilayers