Effect of the Formation of Silicon Oxide on the Sign, Magnitude and Formation of Surface Charge Upon Water Adsorption on a Silicon Surface

Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at the ZnS/Si interface

“…The analysis of the features of the manifestation of the field effect on TAE in a semiconductor made it possible to develop a method for monitoring the charge state on a surface; a detailed description of the methodology can be found in [19][20][21]. In other words, the change in the surface charge leads, through the field effect, to a change in the resistivity of the near-surface region of the space charge of semiconductor, and, accordingly, to the magnitude of TAE.…”

The effect of small addition of copper on the growth process, structure, surface charge and adsorption properties of ZnO films in the pyrolysis of dithiocarbamates

“…The TAE value (the acoustoelectric electromotive force value) is determined by the combination of the surface charges of a biographical origin (forming the initial surface bending of the semiconductor energy bands) and adsorption complexes. [77][78][79][80][81] To measure the TAE, a surface acoustic wave was excited in the z-direction of the yz-LiNbO 3 piezoelectric substrate using an interdigital transducer at a frequency of 37 MHz, a duration of 1.5 ms, and an aperture of 1.8 mm (ESI, † Fig. S2).…”