2016
DOI: 10.3103/s1062873816020064
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Effect of surface microroughness on the composition and electronic properties of CdTe/Mo(111) films

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Cited by 9 publications
(10 citation statements)
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“…The position of peaks A and B with energies 0.5 and 1. eV below the Fermi level is independent of the photon energy. Such features for the N(E) curves in the indirect transition model [10] correspond to the maxima of the density of the electronic states of the valence band. It should be noted that the peak located directly near the Fermi level (∼0.5 eV) is very sensitive to surface contamination by adsorbed gases.…”
Section: Resultsmentioning
confidence: 96%
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“…The position of peaks A and B with energies 0.5 and 1. eV below the Fermi level is independent of the photon energy. Such features for the N(E) curves in the indirect transition model [10] correspond to the maxima of the density of the electronic states of the valence band. It should be noted that the peak located directly near the Fermi level (∼0.5 eV) is very sensitive to surface contamination by adsorbed gases.…”
Section: Resultsmentioning
confidence: 96%
“…It is shown in [10] that when low-energy ions of refractory metals are implanted, the alloying atoms are mainly distributed in the near-surface region of the metal matrix with a depth of up to ten atomic layers. Suppose before implantation of the Mo(111) KVF sample there is a significant increase in the quantum yield of the photoemission as a function of the energy of the incident photons, then after implantation.…”
Section: Resultsmentioning
confidence: 99%
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“…Показано, что совершенства и свойства этих пленок во многом зависят от метода синтеза, от их толщины и от свойств приконтактного (переходного) слоя, формирующегося на границе раздела пленка-подложка. В последние годы метод низкоэнергетической ионной имплантации часто используется для получения наноразмерных структур на поверхности и в приповерхностной области полупроводников и диэлектрических пленок [7][8][9][10]. В частности, имплантацией ионов Ва + в СdTe в сочетании с отжигом получены нанопленки типа Cd 0.5 Ва 0.5 Te [10].…”
Section: Introductionunclassified
“…Single crystals and films of A 2 B 6 semiconductor compounds, in particular CdS, and related multilayer heterostructures are widely used for the creation of various micro-, nano-, and optoelectronic devices, including those for solar power engineering [1][2][3][4]. At present, the influence of heat treatments, laser annealing, microwave processing, and the ion and electron bombardment on the structure, composition, and optical properties of A 2 B 6 compounds and the process of atomic interdiffusion at the interfaces of multilayer systems based on these semiconductors have been thoroughly studied [5][6][7][8][9][10][11][12][13]. In recent years, we have used implantation of Ba + ions into CdTe and CdS [11,12] to obtain doped single crystalline layers and Cd 1 -x Ba x Te and Cd 1 -x Ba x S surface and subsurface layers.…”
mentioning
confidence: 99%