Effect of sulfur concentration on structural, optical and electrical properties of Cu2FeSnS4 thin films for solar cells and photocatalysis applications

Nefzi, Chayma; Souli, Mehdi; Cuminal, Y.; Kamoun‐Turki, Najoua

doi:10.1016/j.spmi.2018.09.033

Cited by 47 publications

(7 citation statements)

References 37 publications

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“…7 (a) and (b), we note that ԑ r and ԑ i values varied from 1 to 17 and from 0.03 to 3.5 as a function of wavelength respectively. The real part is higher than the imaginary part which indicates a weak energy loss of light within the film [48]. This effect can be explained by a larger crystallites size, which results in fewer grain boundaries, which reduces optical losses [48].…”

Section: Optical Dielectric Constantmentioning

confidence: 99%

Optoelectronic and Dielectric Properties of Tenorite CuO Thin Films Sprayed at Various Molar Concentrations

Ben Messaoud,

Ouahab,

Rahmane

et al. 2024

Period. Polytech. Chem. Eng.

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The work in hand presents the elaboration of CuO thin films using a home-made spray pyrolysis technique at room atmosphere. The films were synthesized on preheated glass substrate at 450 °C. The source solution molarity was varied from 0.025 to 0.1 mol/L. The films were characterized by employing X-Ray Diffraction technique, UV-Vis-NIR spectrophotometry, Scanning Electron Microscope imagery, Energy Dispersive Spectroscopy, and four-points probe techniques. The X-ray diffraction analysis confirmed that all films are polycrystalline with a preferred orientation along the plane (−111) of the monoclinic crystal structure phase of tenorite (CuO). The SEM images showed a homogeneous and smooth surface. Crystallinity and grain size were improved. The rise of solution concentration induced a reduction of transmittance and reflectance in the visible region. The energy gap, the absorption coefficient, the extinction coefficient, refractive index, dielectric constant (ԑr and ԑi) and loss energy were estimated from transmittance and reflectance data. The gap energy decreases from 2.72 to 2.56 eV. The film deposited for 0.025 mol/L exhibits the highest real part of the dielectric constant (ԑr ~ 17). The film resistivity which is in order of 102 Ω cm decreases with the increase of molar concentration. The estimated dielectric constant indicated that the resulting CuO thin films could be used as dielectric layers for optoelectronic devices working in Vis-NIR region of radiation. Furthermore, the relatively high band gap, high absorption coefficient and high conductivity of the film obtained at 0.075 mol/L, make them good candidates as absorption layers in solar cells applications.

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Section: Optical Dielectric Constantmentioning

confidence: 99%

Optoelectronic and Dielectric Properties of Tenorite CuO Thin Films Sprayed at Various Molar Concentrations

Ben Messaoud,

Ouahab,

Rahmane

et al. 2024

Period. Polytech. Chem. Eng.

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“…However, the excellent optoelectronic performance is extremely dependent on the lone pairs of electrons of toxic Pb 2+ and O h symmetry of PbX 6 4À octahedra, so that obtaining Pb-free perovskites with an improvement of the stability of perovskites becomes a contradiction that is difficult to solve. [9][10][11] Tetrahedral optoelectronic semiconductors structures, such as Si, CdSe, GaN, and GaAs, and hybrid heterostructured semiconductors, have suitable bandgap values and a long carrier diffusion length, [12][13][14] but at the same time, possess an indirect bandgap (Si), toxic elements (CdSe), are inhomogeneous, and suffer from an easy decomposition of components such as GaN-based materials. These challenges hinder the further development of these conventional optoelectronic semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Machine learning and density functional theory simulation of the electronic structural properties for novel quaternary semiconductors

Gao

Cai

Liu

et al. 2023

Phys. Chem. Chem. Phys.

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“…Also, a lots metal can be employed as doping elements to improve the quality of crystalline thin films' properties with excellent physical and chemical properties of nanostructured thin films. Abundant and environment-friendly quaternary CFTS films have been grown by different fabrication methods such as the spray pyrolysis method (Nefzi et al, 2020b), electrochemical deposition technique (Miao et al, 2017), chemical method (Nefzi et al, 2018), RF-magnetron sputtering (Meng et al, 2015a), chemical spray pyrolysis (Khadka & Kim, 2015) and spin coating (Dong et al, 2018). To our knowledge, there is limited information on the effect of sulfur on the physical properties of CFTS films fabrication using different techniques (Meng et al, 2015b;Meng et al, 2017).…”

Section: Introductionmentioning

confidence: 99%

Optical and Morphological Properties of Cu2FeSnS4 Chalcogenide Films

Ava

Baturay

2023

Yüzüncü Yıl Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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P-type Cu2FeSnS4 (CFTS) quaternary chalcogenide films have been grown by method of spin coating on glass substrates relate to 30 and 40 sccm sulfur flux. Physical properties of obtained samples were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and ultraviolet visible (Uv-vis) spectrophotometer to see the effect of deposition parameters on the thin film. The crystal parameters including crystal size, dislocation density and strain value of the samples were changed related to the deposition parameters. XRD results indicated an improvement of crystalline quality of quaternary chalcogenide CFTS with a maximum crystal size about 50 nm for (112) peak orientation. SEM images illustrated that the particle size was changed with increasing in the flux of sulfur, which was confirmed with both XRD and AFM images. It was seen that the absorption and energy band gap value of the samples changed the effect of sulfur flux and CFTS film for 40 sccm exhibited more strong absorption than CFTS film for 30 sccm in the Uv-vis region. The band gap values of the samples were calculated as 1.56 and 1.63 eV for 30 and 40 sccm, respectively. The results propose.that samples for 30 sccm flux rate produced at 550 °C have the good physical properties.

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Effect of sulfur concentration on structural, optical and electrical properties of Cu2FeSnS4 thin films for solar cells and photocatalysis applications

Cited by 47 publications

References 37 publications

Optoelectronic and Dielectric Properties of Tenorite CuO Thin Films Sprayed at Various Molar Concentrations

Optoelectronic and Dielectric Properties of Tenorite CuO Thin Films Sprayed at Various Molar Concentrations

Machine learning and density functional theory simulation of the electronic structural properties for novel quaternary semiconductors

Optical and Morphological Properties of Cu2FeSnS4 Chalcogenide Films

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