Effect of sodium p-type doping on the structural, electrical and optical properties of zinc oxide

Aimouch, D.E.; Meskine, S.; Cherif, Y. Benaissa; Zaoui, A.; Boukortt, A.

doi:10.1016/j.ijleo.2016.11.128

Cited by 16 publications

(3 citation statements)

References 28 publications

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“…[123] Groups Ia (Li, Na, K) and Ib (Cu, Ag, Au) have also been selected for p-type doping in ZnO. [60,72,73,98,99,[124][125][126][127][128] The DFT calculation suggested that Li, Na, and K impurities give rise to shallower acceptor levels than the group V impurities, especially P, As, and Sb. [99] There are some reports on the p-type ZnO:Li.…”

Section: P-doping In Znomentioning

confidence: 99%

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn ₃ N ₂ precursors

Xiao

et al. 2017

Chinese Phys. B

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P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices. The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications. In this paper, we introduce an alternative route to stabilizing N in the oxidation process, the thermal stability of p-ZnO is significantly improved. Finally, we discuss the limitations of the alternative doping method and provide some prospective outlook of the method.

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Section: P-doping In Znomentioning

confidence: 99%

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn ₃ N ₂ precursors

Xiao

et al. 2017

Chinese Phys. B

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“…Perovskite materials, in general, have changeable band gaps that allow them to tailor their physical characteristics [1][2][3][4]. The best organic and Rb-containing solar cell composites have a transform efficiency of 25.6 percent [5], while environmental interactions, poisonous lead, poor electrical properties, and disturbances have hampered their use [6,7]. To overcome these issues, a wide range of studies have been carried out to examine lead-free and inorganic perovskites and their derivatives [6,8,9].…”

Section: Introductionmentioning

confidence: 99%

DFT study of electronic, optical, and elastic properties of double perovskites Rb₂YAgX₆ (X = Br, I) compounds for opto-electronic device applications

et al. 2023

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Density functional theory calculations have been used to investigate the electrical, optical, and elastic characteristics of double perovskites Rb2YAgX6 (X= Br, I) halides for exploring their opto-electronic applications. For optimizing the lattice constants and structure parameters, we have fitted the Murnaghan equation of state to the total energies computed for a wide range of lattice volumes. For the ground state lattice constants, the computed electronic band structure diagrams show indirect wide band gaps of 4.2 eV and 3.2 eV for Rb2YAgBr6 and Rb2YAgI6, respectively. Our results indicate that both of the studied halides absorb electromagnetic radiations beyond the visible region and are therefore appear potential candidates for optoelectronic applications in the ultraviolet rage of spectrum. The mechanical stability and ductility of the two halides are examined in terms of the elastic constants. Our results clearly demonstrate that the device application potential of these double perovskite halides is interesting owing to their high mechanical stability and hardness.

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“…Some studies obtained n-type ZnO using K [22], Na [23], P [24] and N [25] as dopants. As a way to mitigate these effects and obtain p-type ZnO, Na have been suggested as dopant, since theoretically it can increase its solubility in ZnO [23,26], which results in a stable p-type conductivity and allow the manufacturing of ZnO p-n homojunctions.…”

Section: Introductionmentioning

confidence: 99%

Rectifying ZnO–Na/ZnO–Al aerogels p-n homojunctions

Mukai

Bernardes

Müller

et al. 2022

J Mater Sci: Mater Electron

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Semiconductor ZnO aerogels were synthesized by a sol-gel process with different concentrations (2.5-7.5 wt.%) of Al (n-type) or Na (p-type) and dried under supercritical CO 2 . The materials were calcined at 500 °C to remove the organic content and to crystallize the ZnO. The microstructure of the ZnO-based aerogels comprises a porous structure with hexagonal and platelet-shaped interconnected particles. The bandgap of the aerogels doped with Al decreased significantly compared to pure, undoped ZnO aerogels, while their specific surface area increased. For the electrical characterization of the ZnO-Na/ZnO-Al junctions, the doped ZnO aerogels were deposited on commercial glass substrates coated with indium tin oxide (ITO) by drop casting method. The I-V curves of the p-n homojuntions revealed a characteristic diode rectifying behavior.

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Effect of sodium p-type doping on the structural, electrical and optical properties of zinc oxide

Cited by 16 publications

References 28 publications

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn ₃ N ₂ precursors

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn ₃ N ₂ precursors

DFT study of electronic, optical, and elastic properties of double perovskites Rb₂YAgX₆ (X = Br, I) compounds for opto-electronic device applications

Rectifying ZnO–Na/ZnO–Al aerogels p-n homojunctions

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Effect of sodium p-type doping on the structural, electrical and optical properties of zinc oxide

Cited by 16 publications

References 28 publications

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn 3 N 2 precursors

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn 3 N 2 precursors

DFT study of electronic, optical, and elastic properties of double perovskites Rb2YAgX6 (X = Br, I) compounds for opto-electronic device applications

Rectifying ZnO–Na/ZnO–Al aerogels p-n homojunctions

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The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn ₃ N ₂ precursors

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn ₃ N ₂ precursors

DFT study of electronic, optical, and elastic properties of double perovskites Rb₂YAgX₆ (X = Br, I) compounds for opto-electronic device applications